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w flange Datasheet PDF File

For w flange Found Datasheets File :: 6810 Search Time::0.844ms
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				意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	BUX48A BUV48A BUV48AFI BUX48
OCR Text	...o 150 150 150 V V V V A A A A A w C o C o Unit V CER V CES VCEO V EBO IC I CM I CP IB I BM P tot T stg Tj Collector-Emitter Voltag...flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 m 6/...
Description	HIGH POwER NPN SILICON TRANSISTORS RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 24V; Power: 1w; Pot-Core Transformer - separated HIGH POwER NPN SILICON TRANSISTORS
File Size	88.73K / 7 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	BUX48C BUV48C BUV48CFI
OCR Text	... 200 Un it V V V V A A A A A w o o -65 to 200 -65 to 150 C C 1/6 January 2000 BUX48C/BUV48C/BUV48CFI THERMAL DATA TO -3 R ...flange) Recommended 0.8 Nm; Maximum: 1 Nm : - The side of the dissipator must be flat within 80 m ...
Description	HIGH VOLTAGE FAST-SwITCHING NPN POwER TRANSISTORS
File Size	47.06K / 6 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...o 150 300 260 UNITS V V A A A V w w/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanen...flange that is Closer to Source and Gate Pins and the Center of Die Measured From The Source Lead, 6...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POwER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...o 150 300 260 UNITS V V A A A V w w/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanen...flange that is Closer to Source and Gate Pins and the Center of Die Measured From The Source Lead, 6...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...55 to 150 300 UNITS V V A A A V w w/oC mJ A oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . ....flange that is Closer to Source and Gate Pins and the Center of Die Measured From the Source Lead, 6...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	...o 150 300 260 UNITS V V A A A V w w/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . ....
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRF9540 RF1S9540SM FN2282
OCR Text	...o 175 300 260 UNITS V V A A A V w w/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . ....
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POwER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POwER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
File Size	59.17K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	...o 150 300 260 UNITS V V A A A V w w/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . ....
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	QTLP320C-E QTLP320C-R QTLP320C-Y QTLP320CY QTLP320CE QTLP320CR
OCR Text	...0 30 20 10 0 0 Rin J-A = 600 C/w Rin J-A = 500 C/w Rin J-A = 400 C/w Rin J-A = 300 C/w Fig 4. Relative Luminous Intensity vs. Off Axis Angle Maximum DC Forward Current (mA) 20 40 60 80 100 120 Ambient Temperature...
Description	4 - PIN POwER LED T-1 SINGLE COLOR LED, ORANGE, 3 mm Orange 4 - PIN Power LED Red 4 - PIN Power LED High Efficiency Red Rectangular Solid State Lamp
File Size	333.99K / 4 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	THD215HI THD215
OCR Text	... 150 150 Uni t V V V A A A A w o o C C 1/6 December 1999 THD215HI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case ...flange) Recommended 0.8 Nm; Maximum: 1 Nm : - The side of the dissipator must be flat within 80 m ...
Description	HIGH VOLTAGE FAST-SwITCHING NPN POwER TRANSISTOR
File Size	64.53K / 6 Page	View it Online	Download Datasheet

For w flange Found Datasheets File :: 6810 Search Time::0.844ms
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