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Microsemi, Corp. ADPOW[Advanced Power Technology]
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Part No. |
UTV005P
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Description |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
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File Size |
134.32K /
2 Page |
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it Online |
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![T10A120T T10A130B T10A200T T10A240T T10A270B](Maker_logo/littelfuse.GIF)
Littelfuse
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Part No. |
T10A120T T10A130B T10A200T T10A240T T10A270B
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Description |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 108V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs). T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 117V,max. Ir = 50uA @ Vr = 130V,max, Bulk (500pcs). T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs). T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 216V,max. Ir = 50uA @ Vr = 240V,max, Tape and reeled (1500pcs). T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 243V,max. Ir = 50uA @ Vr = 270V,max, Bulk (500pcs).
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File Size |
67.10K /
1 Page |
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TOSHIBA
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Part No. |
2SC5320
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Description |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: FT=16GHz series)
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File Size |
122.69K /
2 Page |
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it Online |
Download Datasheet
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TOSHIBA
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Part No. |
2SC5317FT
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Description |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series)
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File Size |
102.64K /
2 Page |
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it Online |
Download Datasheet
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Price and Availability
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