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    APTCV60TLM99T3G

Microsemi Corporation
Part No. APTCV60TLM99T3G
OCR Text Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 30A @ Tc = 80C CoolMOSTM Q1, Q4: VDSS = 600V ; ID = 17A @ Tc = 80C Application * Solar converter * Uninterruptible Power Supplies Features * Q2, Q3 ...
Description Three level inverter CoolMOS & Trench Field Stop IGBT Power

File Size 243.34K  /  9 Page

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    SEMIX653GAL176HDS09

Semikron International
Part No. SEMIX653GAL176HDS09
OCR Text ... Values Unit SEMiX(R) 3s Trench IGBT Modules SEMiX653GAL176HDs Tj = 150 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 ...
Description Trench IGBT Modules

File Size 160.51K  /  6 Page

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    APTCV60TLM70T3G

Microsemi Corporation
Part No. APTCV60TLM70T3G
OCR Text Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 50A @ Tc = 80C CoolMOSTM Q1, Q4: VDSS = 600V ; ID = 29A @ Tc = 80C Application * Solar converter * Uninterruptible Power Supplies Features * Q2, Q3 ...
Description Three level inverter CoolMOS & Trench Field Stop IGBT Power Module

File Size 279.44K  /  11 Page

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    FDMC7680

Fairchild Semiconductor
Part No. FDMC7680
OCR Text Trench(R) MOSFET July 2009 FDMC7680 N-Channel Power Trench(R) MOSFET 30 V, 14.8 A, 7.2 m: Features Max rDS(on) = 7.2 m: at VGS = 10 V, ID = 14.8 A Max rDS(on) = 9.5 m: at VGS = 4.5 V, ID = 12.4 A High performance technology for...
Description N-Channel Power Trench垄莽 MOSFET 30 V, 14.8 A, 7.2 m
N-Channel Power Trench? MOSFET 30 V, 14.8 A, 7.2 m

File Size 203.30K  /  7 Page

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    NCE25G120T

Wuxi NCE Power Semiconductor Co., Ltd
Part No. NCE25G120T
OCR Text Trench NPT IGBT Features Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage: VCE(sat)=2.0V@IC=25A High input impedance Applications Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching app...
Description 1200V, 25A, Trench NPT IGBT

File Size 425.12K  /  8 Page

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    SEMIX703GB126HDS09

Semikron International
Part No. SEMIX703GB126HDS09
OCR Text ... Values Unit SEMiX(R) 3s Trench IGBT Modules SEMiX703GB126HDs Tj = 150 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * U...
Description Trench IGBT Modules

File Size 158.46K  /  6 Page

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    SEMIX653GD176HDC09

Semikron International
Part No. SEMIX653GD176HDC09
OCR Text ...Values Unit SEMiX(R) 33c Trench IGBT Modules SEMiX653GD176HDc Tj = 150 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 ...
Description Trench IGBT Modules

File Size 158.09K  /  5 Page

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    SEMIX653GB176HDS09

Semikron International
Part No. SEMIX653GB176HDS09
OCR Text ... Values Unit SEMiX(R) 3s Trench IGBT Modules SEMiX653GB176HDs Tj = 150 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 ...
Description Trench IGBT Modules

File Size 159.57K  /  6 Page

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