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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M57161L-01
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| Description |
Integrated Gate Bipolar transistor (igbt) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE igbt
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| File Size |
112.05K /
6 Page |
 View
it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRG4PSH71UD
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| Description |
99 A, 1200 V, N-CHANNEL igbt, TO-274AA
INSULATED GATE BIPOLAR transistor WITH
1200V UltraFast 4-20 kHz CoPack igbt in a TO-274AA package
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| File Size |
322.70K /
10 Page |
View
it Online |
Download Datasheet |
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Hynix Semiconductor, Inc.
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| Part No. |
ISL9G1260EP3 ISL9G1260ES3
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| Description |
transistor | igbt | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
transistor | igbt | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| igbt的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
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| File Size |
147.96K /
11 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRG4PC60U-P
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| Description |
INSULATED GATE BIPOLAR transistor UltraFast Speed igbt
600V UltraFast 8-60 kHz Discrete igbt in a TO-247AC Solder Plate package
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| File Size |
119.66K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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