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FN521 PS200 1N445 55C100B 4FST3 LTC2630 C1815 ITS410
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    Analog Power
Part No. AM4502CE
OCR Text ... temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i ...
Description P & N-Channel 30-V (D-S) MOSFET

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    Analog Power
Part No. AM4502AC
OCR Text ...31.3 t j , t stg o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i ...
Description P & N-Channel 30-V (D-S) MOSFET

File Size 260.16K  /  8 Page

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    AD721 AD721JP AD720JP AD720

AD[Analog Devices]
Part No. AD721 AD721JP AD720JP AD720
OCR Text ...vide best scaling accuracy when source resistance is 37.5 (75 reverse-terminated input). 2 Required for driving a 75 double reverse terminated load. 3 All outputs are measured at a reverse-terminated load; voltages at IC pins are twice t...
Description RGB to NTSC/PAL Encoders

File Size 131.76K  /  8 Page

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    IPB22N03S4L-15 IPI22N03S4L-15

Infineon Technologies AG
Part No. IPB22N03S4L-15 IPI22N03S4L-15
OCR Text ...nche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 C T C=25 C I D=22 A T C=25 C Value 22 22 88 20 22 16 31 ...
Description OptiMOS-T2 Power-Transistor

File Size 186.67K  /  9 Page

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    2V7002K 2V7002KT1G 2N7002KT3G

ON Semiconductor
Part No. 2V7002K 2V7002KT1G 2N7002KT3G
OCR Text ... symbol value unit drain ? to ? source voltage v dss 60 v gate ? to ? source voltage v gs 20 v drain current (note 1) steady state 1 sq in pad t a = 25 c t a = 85 c i d 380 270 ma drain current (note 2) steady state minimum pad t a = ...
Description Small Signal MOSFET 60 V, 380 mA, Single, N?Channel, SOT?3

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    Micross Components
Part No. SST309SOT-23
OCR Text ...n ? voltage ? or ?? gate ? to ? source ? voltage ??\ 25v ? ?? ?? sst309 ? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristic ? min ? typ. ? max ? unit ? conditions ? bv gss ? gate ? to ? source ? b...
Description N-CHANNEL JFET

File Size 282.49K  /  1 Page

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    Micross Components
Part No. SST308SOT-23
OCR Text ...n ? voltage ? or ?? gate ? to ? source ? voltage ??\ 25v ? ?? ?? sst308 ? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristic ? min ? typ. ? max ? unit ? conditions ? bv gss ? gate ? to ? source ? b...
Description N-CHANNEL JFET

File Size 283.00K  /  1 Page

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    IPB160N04S3-H2

Infineon Technologies AG
Part No. IPB160N04S3-H2
OCR Text ...anche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D=80 A Value 160 157 640 898 20 214 -55 ... +175...
Description OptiMOS-T Power-Transistor

File Size 190.34K  /  9 Page

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    Analog Power
Part No. AM4560C
OCR Text ...sed drain current b continuous source current (diode conduction) a parameter drain-source voltage gate-source voltage absolute maximum ratings (t a = 25c unless otherwise noted) t <= 10 sec 82 @ v gs = 10v 100 @ v gs = 4.5v -60 maximum...
Description N & P-Channel 60-V (D-S) MOSFET

File Size 333.57K  /  7 Page

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    IPB039N10N3G

Infineon Technologies AG
Part No. IPB039N10N3G
OCR Text ...anche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 160 113 640 340 20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 C I D=100 ...
Description OptiMOS?? Power-Transistor

File Size 259.42K  /  9 Page

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