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  insulated-gate Datasheet PDF File

For insulated-gate Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MGP11N60ED-D

ON Semiconductor
Part No. MGP11N60ED-D
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 122.69K  /  6 Page

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    MGP7N60ED-D

ON Semiconductor
Part No. MGP7N60ED-D
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 120.86K  /  6 Page

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    MGP4N60ED-D

ON Semiconductor
Part No. MGP4N60ED-D
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 122.50K  /  6 Page

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    MGY25N120D-D

ON Semiconductor
Part No. MGY25N120D-D
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 143.49K  /  6 Page

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    MGW12N120D-D

ON Semiconductor
Part No. MGW12N120D-D
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 143.47K  /  6 Page

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    SSM25G45EM

List of Unclassifed Manufacturers
ETC[ETC]
Silicon Standard Corp.
Part No. SSM25G45EM
Description N-CHANNEL insulated-gate BOPOLAR TRANSISTOR
N-CHANNEL insulated-gate BIPOLAR TRANSISTOR

File Size 248.24K  /  4 Page

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    ONSEMI[ON Semiconductor]
Part No. MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system

File Size 134.49K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. MGW12N120
Description Insulated Gate Bipolar Transistor N-Channel
Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE

File Size 133.06K  /  5 Page

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    IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15

International Rectifier
Part No. IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15
Description 55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR
   INSULATED GATE BIPOLAR TRANSISTOR

File Size 367.67K  /  10 Page

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    IRG4BC29F IRG4BC30F IRG4BC30

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC29F IRG4BC30F IRG4BC30
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)

File Size 164.74K  /  8 Page

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