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    2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA

SANYO[Sanyo Semicon Device]
SANYO SEMICONDUCTOR CO LTD
Sanyo Electric Co.,Ltd.
Part No. 2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA
OCR Text ...itter Cutoff Current DC Current gain gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-t...
Description Low-Power, Single/Dual-Voltage &#181;P Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    2SA2040 2SC5707 C5707 2SA2040TP 2SA2040TP-FA 2SC5707TP-FA 2SC5707FA

SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
Part No. 2SA2040 2SC5707 C5707 2SA2040TP 2SA2040TP-FA 2SC5707TP-FA 2SC5707FA
OCR Text ...itter Cutoff Current DC Current gain gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-t...
Description PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP / NPN Epitaxial Planar Silicon Transistors
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 8A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 8A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay

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    2SA2043 2SC5709 2SA2043TP-FA 2SC5709TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2043 2SC5709 2SA2043TP-FA 2SC5709TP-FA
OCR Text ...itter Cutoff Current DC Current gain gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-...
Description CABLE ASSEMBLY; UHF MALE TO UHF MALE; 50 OHM, RG58C/U COAX 直流/直流转换器应
NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 10A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 10A I(C) | TO-251VAR

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    2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA

SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
Part No. 2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA
OCR Text ...itter Cutoff Current DC Current gain gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-...
Description Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 9A I(C) | TO-252VAR
DC / DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP / NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

File Size 37.49K  /  5 Page

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    2SA2048

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2048
OCR Text ...C= -10mA 120 - 390 - DC current gain fT - 350 - MHz VCE= -10V, IE=100mA, f=10MHz Transition frequency Collector output capacitance Cob - 10 - pF VCB= -10V, IE=0A, f=1MHz Ton - 30 - ns IC= -1.0A Turn-on time IB1= -0.1A Tstg - 100 - ns IB2=0....
Description Medium power transistor (−30V, −1.0A)
Medium power transistor (-30V, -1.0A)

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    2SA2049

ROHM[Rohm]
Part No. 2SA2049
OCR Text ...r saturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol Min. Typ. Max. Unit Conditions BVCBO -30 - - V IC= -100A BVCEO -30 - - V IC= -1mA BVEBO -6 - - V IE= -100A - -...
Description MEDIUM POWER TRANSISTOR

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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...ications * * * High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collecto...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 189.75K  /  5 Page

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...ications * * * High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collect...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...ications * * * High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collect...
Description SILICON PNP EPITAXIAL TYPE

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...ications * * * High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collecto...
Description Silicon PNP Epitaxial Type

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For gain Found Datasheets File :: 104598    Search Time::3.359ms    
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