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NTE[NTE Electronics]
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Part No. |
NTE580
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OCR Text |
...tacts D Fast Switching for High effeciency D 3A Operation at TA = +25C with No Thermal Runaway Maximum Ratings and Electrical Characteristics: (TA = +25C unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load... |
Description |
General Purpose Silicon Rectifier Fast Recovery
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File Size |
15.27K /
1 Page |
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SGS Thomson Microelectronics
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Part No. |
AN1224
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OCR Text |
...ture figure 6: output power and effeciency versus input power
an1224 - application note 6/7 1 10 100 vds, drain-source voltage (volts) 1 10 id, drain current (a) class a safe operating region tc= 70c tc=100c tj=200c 15 30 45 60 pout (w) 1... |
Description |
LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION
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File Size |
58.37K /
7 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
M65761FP
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OCR Text |
... possible to improve the coding effeciency against the dither image by the use of AT. MAX127 * It is posible to change the position of AT line by line in the middle of coding X X X X and decoding. A X X X X ? Note:It is not possible to chan... |
Description |
SPECIFICATION OF INTEGRATED CIRCUIT(QM-CODER)
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File Size |
133.88K /
29 Page |
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Mimix Broadband, Inc.
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Part No. |
CMM1631-SM-0G00 CMM1631-SM-0G0T CMM1631-SM0608 MIMIXBROADBANDINC-CMM1631-SM-0G0T
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OCR Text |
....4 17.6 17.8 18 frequency (ghz) effeciency (%) eff 7v august 2006 - rev 26-aug-06
page 3 of 4 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and... |
Description |
16.0-18.0 GHz 1.5-Watt Power Amplifier 16000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 16.0-18.0 GHz 1.5-Watt Power Amplifier 16.0-18.0千兆50瓦功率放大器
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File Size |
223.32K /
4 Page |
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Central Semiconductor Corp. Central Semiconductor, Corp.
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Part No. |
CSHDD16-40C CSHDD16-100C CSHDD16-60C
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OCR Text |
...istency ? low power loss, high effeciency ? high voltage description: the central semiconductor cshdd16-40c series types are silicon schottky rectifiers designed for surface mount fast switching applications requiring a low forward voltag... |
Description |
SILICON SCHOTTKY RECTIFIERS DUAL, COMMON CATHODE 16 AMP, 40 THRU 100 VOLTS 8 A, 60 V, SILICON, RECTIFIER DIODE
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File Size |
58.68K /
2 Page |
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MicroWave Technology, Inc.
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Part No. |
MPS-0809A9-82
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OCR Text |
... volt bias 26% high power added effeciency features features specifications specifications electrical at 25 c, vdd= 6.0 v, zo= 50 symbol parameter min. typical max unit freq ssg p1db ip3 nf vswr gof... |
Description |
870 MHz - 925 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
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File Size |
133.97K /
2 Page |
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it Online |
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MicroWave Technology, Inc.
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Part No. |
MPS-0909A9-82
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OCR Text |
... volt bias 26% high power added effeciency features features specifications specifications electrical at 25 c, vdd= 6.0 v, zo= 50 symbol parameter min. typical max unit freq ssg p1db ip3 nf vswr gof... |
Description |
925 MHz - 960 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 10 PIN
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File Size |
136.84K /
2 Page |
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it Online |
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MicroWave Technology, Inc.
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Part No. |
MPS-1718A9-82
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OCR Text |
... volt bias 26% high power added effeciency features features specifications specifications electrical at 25 c, vdd= 6.0 v, zo= 50 symbol parameter min. typical max unit freq ssg p1db ip3 nf vswr gof... |
Description |
1710 MHz - 1785 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 10 PIN
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File Size |
128.00K /
2 Page |
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it Online |
Download Datasheet
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