...
Units
dB % dBc
D
IMD
dc Characteristics at TCASE = 25C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions...
Description
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
... can also be chosen to suit the dc accuracy and temperature drift requirements of the application. A differential clock input is used to con...dcS function not applicable for -40 model. Output delay is measured from clock 50% transition to dat...
...Power Control Voltage (VAPC1,2) dc Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage...dcS/PCS Mode)
Operating Frequency Range Maximum Output Power
2
POWER AMPLIFIERS
Total Effici...
Description
TRIPLE-BAND GSM/dcS/PCS POWER AMP MODULE 三频的GSM / dcS / PCS的功率放大器模块
... (VAPC) Enable Voltage (VAT_EN) dc Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature
Preliminary
Rating
-0.5 to +6.0 -0.5 to +3.0 -0.5 to +3.0 1500 +13 50 10:1 -40 t...
Description
3V dcS POWER AMPLIFIER 3V dcS POWER AMPLIFIER 3V的集散控制系统功率放大器
...ators in One Package: Step-Down dc-dc for I/O at 1.3A Step-Down dc-dc for Memory at 0.9A Step-Down Serial-Programmed dc-dc for CORE Three LD...dcs On (Core Off) 200A All Regulators On, No Load 5A Shutdown Current Optimized for X-Scale Process...
Description
High-Efficiency, Low-IQ PMICs with Dynamic Core for PDAs and Smart Phones
...ANDLING THERMAL CHARACTERISTICS dc CHARACTERISTICS AC CHARACTERISTICS PACKAGE OUTLINE SOLDERING Introduction Reflow soldering Wave soldering...dcS R/W A1 A0 IRQ
37
SAA7206
PACKET IDENTIFICATION BANK
CONTROL WORD BANK
7 to 9, 12 ...