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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SUF-3000
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| OCR Text |
...Thermal Resistance (junction-to-backside)
dB V mA dB/C C/W
2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz
10.0 10.0 8.0 16.0 15.5 13.5 27.0 26.5 ... |
| Description |
0.25-16 GHz, Cascadable pHEMT MMIC Amplifier
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| File Size |
132.14K /
4 Page |
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it Online |
Download Datasheet
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SUF-4000
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| OCR Text |
...Thermal Resistance (junction-to-backside)
dB dBm dBm dB dB dB dB V mA dB/C C/W
2 GHz 6 GHz 2 GHz 6 GHz 2 GHz 6 GHz 2 GHz 6 GHz 2 GHz 6 GHz 2 GHz 6 GHz 2 GHz 6 GHz
17.0 14.5 21.0 20.0 32.0 30.5 2.8 3.7 12.0 -11.5 -18.0 -20.0 -21.0 -... |
| Description |
0.15-10 GHz, Cascadable pHEMT MMIC Amplifier
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| File Size |
130.81K /
4 Page |
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it Online |
Download Datasheet |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SUF-5000
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| OCR Text |
...Thermal Resistance (junction to backside)
dB dBm dBm dB dB dB dB V mA dB/C C/W
2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz 2 GHz 4 GHz
19.0 17.0 22.0 22.0 34.5 34.5 3.2 3.6 -19.0 -15.0 -13.0 -12.0 -24.0 ... |
| Description |
0.1-3.7 GHz, Cascadable pHEMT MMIC Amplifier
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| File Size |
106.03K /
4 Page |
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it Online |
Download Datasheet |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGA1342-SCC
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| OCR Text |
...e circuitry through vias to the backside metallization. The TGA1342SCC low noise distributed amplifier is suitable for a commercial radio and variety of wideband electronic warfare systems such as radar warning receivers, electronic counter... |
| Description |
2-20 GHz Wideband AGC Amplifier
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| File Size |
179.25K /
7 Page |
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it Online |
Download Datasheet |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGA4905-CP
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| OCR Text |
... Thermal Resistance (Channel to backside of Package)
Test Conditions
VD = 6 V ID = 2.1 A (Quiescent) PDISS = 12.6 W
TCH (qC)
R4JC (qC/W)
4.63
TM (hrs)
128.35
6.9 E+6
Note: backside of package is at 70 C baseplate temp... |
| Description |
4 Watt Ka Band Packaged Amplifier
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| File Size |
107.88K /
9 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4230-EEU TGF4230
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| OCR Text |
...ss AB operation. Bond - pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire- bonding processes. The TGF4230-EEU is readily assembled using autom... |
| Description |
1.2mm Discrete HFET
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| File Size |
178.29K /
7 Page |
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it Online |
Download Datasheet |
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MIMIX[Mimix Broadband]
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| Part No. |
XA1000
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| OCR Text |
... and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar and applications.
Absolute Maximum Ratings
Supply V... |
| Description |
DC-18.0 GHz GaAs MMIC 5-Bit Digital Attenuator
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| File Size |
414.26K /
6 Page |
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it Online |
Download Datasheet |
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MIMIX[Mimix Broadband]
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| Part No. |
XL1003
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| OCR Text |
... and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT a... |
| Description |
24.0-40.0 GHz GaAs MMIC Low Noise Amplifier
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| File Size |
170.83K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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