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    2SA1127

Panasonic Semiconductor
Part No. 2SA1127
OCR Text ...V V V -60 -55 -7 180 700 - 0.6 -1 200 150 VCE(sat) VBE fT NV V V MHz mV *h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 1 Transistor PC -- Ta 500 -80 Ta=25C -70 -100 25C Ta=75C -80 2SA...
Description Silicon PNP epitaxial planer type

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    2SA1128

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1128
OCR Text ...120 140 160 0 0 -1 -2 -3 -4 -5 -6 IB=-10A 2SA1128 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (mW) Collector current IC (A) - 0....
Description Silicon PNP epitaxial planer type

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    2SA1171

HITACHI[Hitachi Semiconductor]
Part No. 2SA1171
OCR Text ... 1 Typ -- -- -- -- -- 200 1.6 Max -- -0.5 800 -0.75 -0.5 -- -- Unit V A Test conditions I C = -1 mA, RBE = VCB = -75 V, IE = 0 VCE = -12 V, IC = -2 mA Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current...
Description Silicon PNP Epitaxial

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    2SA1188 2SA1189 2SA1189E 2SA1189D

ZETTLER electronics GmbH
HITACHI[Hitachi Semiconductor]
Part No. 2SA1188 2SA1189 2SA1189E 2SA1189D
OCR Text ...utput capacitance Cob VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz Notes: 1. The 2SA1188 and 2SA1189 are grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 See characteristic curves of 2SA1190 and 2SA119...
Description 5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92
Silicon PNP Epitaxial

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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ...e Noise figure Cob NF VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 1 kHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 10 Hz VCB = -6 V, I C = -10 mA, Rg = 0, f = 1 kHz -- 0.2 2.0 ...
Description Silicon PNP Epitaxial

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ...lector current IC (A) -3 -1.0 0.6 -0.3 -0.1 -0.03 -0.01 -0.003 -3 iC (peak) IC max Area of Safe Operation PW t ho 1s t sho ot ms ms 1 1 sh ms = 1W = 10 00 P =1 PW Ta = 25C 0.3 0 50 100 150 Ambient Temperature Ta (C) -10 -30 ...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 33.83K  /  6 Page

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    2SA1194 2SA1194K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1194 2SA1194K
OCR Text ...acteristics P c= .0 -0.8 8W -1 .6 TC = 25C -0 4 -0. DC Current Transfer Ratio vs. Collector Current 100,000 DC current transfer ratio hFE 30,000 10,000 3,000 1,000 300 100 -10 VCE = -3 V Pulse Ta = 75C 25C -1,000 Collector Current IC (mA...
Description Silicon PNP Epitaxial

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    2SA2009

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2009
OCR Text ...120 -120 -5 180 130 120 700 - 0.6 Collector to emitter saturation voltage V mV MHz 1
Description    Silicon PNP epitaxial planer type

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    2SA2010

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2010
OCR Text ...eramic substrate at 15 x 15 x 0.6 mm3. I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collect...
Description    Silicon PNP epitaxial planer type

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    2SA2011 2SC5564

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SA2011 2SC5564
OCR Text ...2038A [2SA2011/2SC5564] 4.5 1.6 1.5 Features * Adoption of MBIT processes. * Large current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall-sized package permitting applied sets to be ma...
Description    DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

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