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CTS
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| Part No. |
742X083XXX 742C163XXX
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| OCR Text |
...0037 isolated 10 - 1m .063w 50v 743 .0071 isolated 10 - 1m .100w 100v 744 .0094 isolated 10 - 1m .125w 200v 745 .0058 bus...013 .004 741x083 0402 x 4 8 4 isolated 0.30 0.15 .012 .006 741c083 0402 x 4 8 4 isolate... |
| Description |
(742Cxxx) Resistor Chip Arrays
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| File Size |
178.39K /
5 Page |
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ERICSSON[Ericsson]
Ericsson Microelectronics
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| Part No. |
PTF10137
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| OCR Text |
...Key P4525-ND Capacitor, 0.1 mF, 50V Digi-Key P5182-ND Capacitor, 100 mF, 50V ATC 100 B 2.0 pF Capacitor, ATC 100 B Digi-Key 2.2 QBK Resistor, 220 W, 1/4W N/A 4 Turn, 20 AWG, .120 I.D. .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200... |
| Description |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
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| File Size |
174.57K /
6 Page |
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it Online |
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Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
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| Part No. |
2SC2655L-X-AE3-R 2SC2655-X-AE3-R 2SC2655GX-AE3-R 2SC2655GX-T9N-B 2SC2655GX-T9N-K 2SC2655G-O-AE3-R 2SC2655L-O-AE3-R 2SC2655-O-T9N-K 2SC2655L-Y-T9N-K 2SC2655L-O-T9N-K
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| OCR Text |
... CONDITIONS IC= 10mA, IB= 0 VCB=50V, IE= 0 VEB= 5V, IC=0 VCE=2V, Ic=0.5A VCE=2V, Ic=1.5A IC=1A, IB=0.05A IC=1A, IB=0.05A VCE=2V, IC=0.5A VCB...013,E
2SC2655
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Ic-VCE 2.4 2.0 1.6 1.2 0.8 0... |
| Description |
2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR HALOGEN FREE PACKAGE-3
2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR LEAD FREE PACKAGE-3
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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| File Size |
203.50K /
4 Page |
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it Online |
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Murate
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| Part No. |
GRM155R60J105KE19
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| OCR Text |
...in 4V, 6.3V, 10V, 16V, 25V, and 50V. This product series (GRM) is offered with a nickel (Ni) barrier termination plated with tin (Sn), and i...013 .016 .024 .12 .058 .159 .06 .058 .062 .037 .037 .049 .042 .042 .217 .217 .17 .037 .036 .036 .067... |
| Description |
Hi-Cap Multilayer Ceramic Chip Capacitors
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| File Size |
170.76K /
1 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD05MMP1
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| OCR Text |
...F 7pF 10pF 19mm W
C2
22uF,50V
4.7k Ohm 27.5mm RF-in
L1 13mm 23.0mm RF-out 120pF
4pF
Note:Board material= glass-Epoxy Subst...013 0.013 0.012 0.011 0.011 0.011 0.010 0.010 0.010 0.010 0.011 0.011 0.011 0.012 0.012 0.013 0.013 ... |
| Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
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| File Size |
124.65K /
7 Page |
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UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
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| Part No. |
MBR0540-CA2-R MBR0540-CB2-R MBR0540L-CA2-R MBR0540 MBR0540L-CB2-R
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| OCR Text |
... Low forward voltage drop (VF=0.50V Typ. at 0.5A) * Guard ring for transient and ESD protection
DIODE
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+ SOD-123
+ SOD-323
*...013,A
MBR0540
ABSOLUTE MAXIMUM RATINGS (Single Diode @TA=25 )
DIODE
PARAMETER SYMBOL RATIN... |
| Description |
SCHOTTKY RECTIFIER DIODE 0.5 A, 40 V, SILICON, SIGNAL DIODE
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| File Size |
79.84K /
3 Page |
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it Online |
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Price and Availability
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