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  400v 7a Datasheet PDF File

For 400v 7a Found Datasheets File :: 730    Search Time::2.484ms    
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    NXP Semiconductors N.V.
Part No. BT234X-600E
OCR Text ...; see figure 11 -0.71.5v v d =400v; i t = 0.1 a; t j =125c; see figure 11 0.25 0.4 - v i d off-state current v d =600v; t j = 125 c - 0.1 0.5 ma dynamic characteristics dv d /dt rate of rise of off-state voltage v dm =402v; t j = 125 c;...
Description 4Q Triac

File Size 164.92K  /  14 Page

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    JANSR2N7392 PD-91394E MIL-PRF-19500 MIL-PRF-661

IRF[International Rectifier]
Part No. JANSR2N7392 PD-91394E MIL-PRF-19500 MIL-PRF-661
OCR Text ...mA VDS > 15V, IDS = 11.7a VDS= 400v ,VGS=0V VDS = 400v, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 18A VDS = 250V VDD =250V, ID =18A, VGS =12V, RG = 2.35 BVDSS Drain-to-Source Breakdown Voltage BV DSS /TJ Temperature Coeffi...
Description 500V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU - HOLE ( TO - 254AA )

File Size 266.85K  /  8 Page

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    IRFIB8N50KPBF

International Rectifier
Part No. IRFIB8N50KPBF
OCR Text ...250A VDS = 500V, VGS = 0V VDS = 400v, VGS = 0V, TJ = 125C VGS = 30V VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) Parameter...7a VDS = 400v VGS = 10V ID = 6.7a RG = 38 VGS = 10V VGS = 0V VDS = 25V Conditions VDS = 50V, ID ...
Description HEXFET Power MOSFET

File Size 170.96K  /  8 Page

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    SKB02N6007

Infineon Technologies AG
Part No. SKB02N6007
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 118) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 35W 30W 25W 20W 15W 10W 5W 0W 25C 7a 6A 5A 4A 3A 2A 1A 0A 25C IC, COLLECTOR C...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 1,149.10K  /  13 Page

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    FDP7N500704

Fairchild Semiconductor
Part No. FDP7N500704
OCR Text ... 25C VDS = 500V, VGS = 0V VDS = 400v, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 3.5A VDS = 40V...7a RG = 25 (Note 4, 5) ------(Note 4, 5) VDS = 400v, ID = 7a VGS = 10V -- Drain-Source ...
Description 500V N-Channel MOSFET

File Size 365.71K  /  10 Page

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    SKB02N60 SKP02N60

INFINEON[Infineon Technologies AG]
Part No. SKB02N60 SKP02N60
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 118) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 35W 30W 25W 20W 15W 10W 5W 0W 25C 7a 6A 5A 4A 3A 2A 1A 0A 25C IC, COLLECTOR C...
Description IGBTs & DuoPacks - 2A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT Diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 392.65K  /  13 Page

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    STB15NK50Z

STMicroelectronics
Part No. STB15NK50Z
OCR Text ...pacitance v gs =0v,v ds = 0v to 400v 150 pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =250v,i d =7a r g = 4.7 w v gs =10v (resistive load see, figure 3) 20 23 ns ns q g q gs q gd tota...
Description N-CHANNEL Power MOSFET

File Size 528.31K  /  14 Page

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    APT15F60B APT15F60S

Microsemi Corporation
Part No. APT15F60B APT15F60S
OCR Text ... = 6A VGS = VDS, ID = 1mA VDS = 400v VGS = 0V TJ = 25C TJ = 125C APT15F60B_S Typ 0.57 0.34 4 -10 Max Unit V V/C V mV/C A nA Paramete...7a VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Tra...
Description N-Channel FREDFET

File Size 175.18K  /  4 Page

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    AOW14N50 AOWF14N50

Alpha & Omega Semiconductors
Part No. AOW14N50 AOWF14N50
OCR Text ...s v ds =5v i d =250 a v ds =400v, t j =125c zero gate voltage drain current i dss zero gate voltage drain current v ds =500v, v gs =0v i...7a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j (c) figure 5:break down vs. junction temparature...
Description 500V, 14A N-Channel MOSFET

File Size 321.11K  /  6 Page

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