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227b Datasheet PDF File

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				IXYS Corporation
Part No.	IXGN50N60BD2 IXGN50N60BD3
OCR Text	... TC = 90C TC = 25C, 1 ms SOT-227b, miniBLOC E 153432 2 1 IC25 IC90 ICM A A A A W V A A W C C C IXGN50N60BD2 1 = Emitter; 2 = Gate 3 = Collector; 4 = Diode cathode 3 SSOA VGE= 15 V, TVJ = 125C, RG = 10 W (RBSOA) Clamped indu...
Description	HiPerFAST IGBT with HiPerFRED
File Size	117.22K / 5 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXGN200N60 IXGN200N60A
OCR Text	... V A A A A W C C C V~ V~ SOT-227b, miniBLOC E G E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter 50/60 Hz IISOL 1 mA t = 1 min t=1s 2500 3000 Mounting torque Termina...
Description	HiPerFAST IGBT
File Size	97.43K / 4 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFN44N50 IXFN48N50 IXFK48N50 IXFH48N50 IXFK44N50
OCR Text	...flammability classification SOT-227b miniBLOC with aluminium nitride isolation Low RDS (on) HDMOSTM process Unclamped Inductive Switching (UIS) rated Fast intrinsic rectifier l l l l l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V,...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	106.45K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFN44N50U2 IXFN44N50U3 IXFN48N50U2 IXFN48N50U3 IXFN-48N50U3 IXFN-48N50U2
OCR Text	...l standard package miniBLOC SOT-227b * Aluminium nitride isolation - high power dissipation * Isolation voltage 3000 V~ * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Low drain-to-case capacitance (<60 pF) - reduc...
Description	HiPerFET Power MOSFET （Buck & Boost Configurations for PFC & Motor Control Circuits最大漏源击穿电00V,导通电.10Ω的N沟道增强型HiPerFET功率MOSFET（步步降配置，用于PFC和电机控制电路）) HiPerFET Power MOSFETs MOSFET Modules
File Size	150.76K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFN520N075T2
OCR Text	...W (M4 screws (4x) supplied) SOT-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr IRM QRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = ...
Description	TrenchT2 GigaMOS HiperFET Power MOSFET
File Size	169.82K / 6 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFN260N17T
OCR Text	...W (M4 screws (4x) supplied) SOT-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 1...
Description	GigaMOS Power MOSFET
File Size	120.02K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFN320N17T2
OCR Text	...W (M4 screws (4x) supplied) SOT-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = ...
Description	GigaMOS TrenchT2 HiperFET Power MOSFET
File Size	173.66K / 6 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFN230N20T
OCR Text	...W (M4 screws (4x) supplied) SOT-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 1...
Description	GigaMOS Power MOSFET
File Size	138.93K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFN360N15T2
OCR Text	...W (M4 screws (4x) supplied) SOT-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 1...
Description	GigaMOSTrenchT2 HiperFET Power MOSFET
File Size	173.49K / 6 Page	View it Online	Download Datasheet

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