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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FGA15N120ANDTU FGA15N120ANDTUNL
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| OCR Text |
...co-pak, igbt with frd : t rr = 210ns (typ.) absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description fg... |
| Description |
Discrete, NPT IGBT with Diode; Package: TO-3P; No of Pins: 3; Container: Rail
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| File Size |
700.31K /
10 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
FDG316P
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| OCR Text |
...a, v gs = -10 v, r gen = 6 ? 210ns q g total gate charge 3.5 5 nc q gs gate-source charge 0.6 nc q gd gate-drain charge v ds = -15 v, i d = -1.6 a, v gs = -10 v 0.8 nc drain-source diode characteristics and maximum ratings i s maximum... |
| Description |
High performance trench technology for extremely low
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| File Size |
56.98K /
2 Page |
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it Online |
Download Datasheet |
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For
210ns Found Datasheets File :: 33 Search Time::1.781ms
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