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1e5 Datasheet PDF File

For 1e5 Found Datasheets File :: 281 Search Time::1.312ms
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				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0R4 FSL913A0R1 FSL913A0R3 FSL9130R3 FSL9130R4
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 1...
Description	7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的，0.300欧姆，拉德硬，SEGR性，P通道功率MOSFET 7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
File Size	58.67K / 8 Page	View it Online	Download Datasheet

				http:// Aeroflex Circuit Technology
Part No.	UT54ACS164245S UT54ACS164245SCC UT54ACS164245SPC UT54ACS164245SWC
OCR Text	...tions valid for radiation dose 1e5 rad(Si) per MIL-STD-883, Method 1019. 2. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V IH = V IH (min) + 20%, - 0%; V IL = V IL(max) + 0%, - 50%...
Description	RadHard Schmitt CMOS 16-bit Bidirectional MultiPurpose Transceiver
File Size	97.75K / 14 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	JANSR2N7408 FN4637
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 26 37 37 37 TYPICAL RANGE () 43 43 36 36 36 APPLIED VGS BIAS (...
Description	Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85 Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs From old datasheet system Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
File Size	54.83K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSF9250R FSF9250D FSF9250R1 FN4090 FSF9250R4 FSF9250D1 FSF9250D3 FSF9250R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V...
Description	From old datasheet system 15A/ -200V/ 0.290 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
File Size	44.47K / 8 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	FSS230R FSS230D FN4054 FSS230R4 FSS230D1 FSS230D3 FSS230R1 FSS230R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V...
Description	RC NETWORK 220 OHM/100PF 5% SMD 8 A, 200 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs From old datasheet system 8A,200V,0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
File Size	45.76K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSS234R FSS234D FN4053 FSS234R4 FSS234D1 FSS234D3 FSS234R1 FSS234R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V...
Description	From old datasheet system 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
File Size	44.72K / 8 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN4485 FSS23A0R4 FSS23A0R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V...
Description	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA From old datasheet system 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
File Size	56.22K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSS23A4R FSS23A4D FN4484 FSS23A4R4 FSS23A4D1 FSS23A4D3 FSS23A4R1 FSS23A4R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V...
Description	7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs From old datasheet system
File Size	46.20K / 8 Page	View it Online	Download Datasheet

For 1e5 Found Datasheets File :: 281 Search Time::1.312ms
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