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For 1 4w Found Datasheets File :: 3758 Search Time::6.297ms
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				LSI[LSI Computer Systems]
Part No.	LS6505
OCR Text	...P), LS6505-S (SOIC)- See Figure 1 APPLICATIONS: Wall and ceiling mounted occupancy sensors providing energy savings and convenience. DESCRIP...4w, all Capacitors 10V unless otherwise specified. PIR = HEIMANN LHi 958 or 878 (Typical) C1 = 33...
Description	PIR SENSOR INTERFACE
File Size	42.01K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF174
OCR Text	...tch At All Phase Angles With 30:1 VSWR * Low Noise Figure -- 3.0 dB Typ at 2.0 A, 150 MHz D MRF174 125 W, to 200 MHz N-CHANNEL MOS BROA...4w IDQ = 100 mA f = 100 MHz Pin = 6 W 160 140 120 100 80 60 40 20 0 12 14 16 18 20 22 24 26 28 VD...
Description	N-CHANNEL MOS BROADBAND RF POWER FET
File Size	166.51K / 10 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GU1111 MRF175GV
OCR Text	...ax Unit OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS =...4w 2W 100 IDQ = 2 x 100 mA f = 225 MHz 0 0 6 Pin, POWER INPUT (WATTS) Figure 8. Power In...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	205.41K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175GU MRF175GV
OCR Text	...ltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C ...4w IDQ = 2 x 100 mA f = 225 MHz Pin = 12 W 200 100 VDD = 28 V IDQ = 2 x 100 mA f = 225 MHz 0 0...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	183.29K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GV MRF175GU
OCR Text	...ltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C ...4w IDQ = 2 x 100 mA f = 225 MHz Pin = 12 W 200 100 VDD = 28 V IDQ = 2 x 100 mA f = 225 MHz 0 0...
Description	From old datasheet system N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	210.44K / 11 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175LU MRF175LV
OCR Text	... PD Tstg TJ Value 65 40 13 270 1.54 - 65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resi...4w 2W Pin = 6 W 160 140 120 100 80 60 40 20 12 14 16 18 20 22 IDQ = 100 mA f = 400 MHz 24 26 28 10 W...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	137.22K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175LV MRF175LU
OCR Text	...D PD Tstg TJ Value 65 40 13 270 1.54 -65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resis...4w 2W Pin = 6 W 160 140 120 100 80 60 40 20 12 14 16 18 20 22 IDQ = 100 mA f = 400 MHz 24 26 28 10 W...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	143.35K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF176 MRF176GU MRF176GV
OCR Text	...ax Unit OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS =...4w 160 120 80 40 0 0 6 Pin, POWER INPUT (WATTS) 12 0 30 32 34 36 38 40 42 44 VDS, SUPPLY VOLTAGE (VO...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	176.10K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF177
OCR Text	...eting in Phoenix, AZ. 6 5, 8 7 1, 4 2 3 CASE 744A-01, STYLE 2 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (...4w 60 40 20 0 10 12 14 16 18 20 22 24 26 28 30 IDQ = 200 mA f = 400 MHz 6.3 W Pin = 10 W 100 90 8...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	184.73K / 6 Page	View it Online	Download Datasheet

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