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![IRFL014N](Maker_logo/international_rectifier.GIF)
International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRFL014N
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OCR Text |
..., VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 11 ID = 1.7A 1.8 nC VDS = 44V 5.0 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID ...4A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
www.irf.com
IRFL014N
100
VGS... |
Description |
55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的,1.9AN沟道HEXFET功率MOSFET5V的,1.9A沟道的HEXFET功率马鞍山场效应管) Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
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File Size |
140.28K /
8 Page |
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![MCH3309](Maker_logo/sanyo_semicon_device.GIF)
Sanyo Semicon Device
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Part No. |
MCH3309
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OCR Text |
...Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--0.8A ID=--0.8A, VGS=-4V ID=--0.4A, VGS=-2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --20 --1 10 -0.4 1.6 2.3 180 240 290 40 2... |
Description |
Ultrahigh-Speed Switching Applications
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File Size |
27.14K /
4 Page |
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it Online |
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![ZXM64P035G ZXM64P035GTA ZXM64P035GTC](Maker_logo/zetex_semiconductors.GIF)
ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC
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Part No. |
ZXM64P035G ZXM64P035GTA ZXM64P035GTC
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OCR Text |
...=0V V DS =-35V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS D V GS =-10V, I D =-2.4A V GS =-4.5V, I D =-1.2A V DS =-10V,I D =-1.2A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
NOTES (1) Measured under pulsed conditions. Width=300 s. D... |
Description |
P-channel MOSFET 35V P-CHANNEL ENHANCEMENT MODE MOSFET 3800 mA, 35 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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File Size |
99.92K /
4 Page |
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it Online |
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![ZXM64P03X ZXM64P03XTA ZXM64P03XTC](Maker_logo/zetex_semiconductors.GIF)
ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC
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Part No. |
ZXM64P03X ZXM64P03XTA ZXM64P03XTC
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OCR Text |
... GS=0V V DS=-30V, V GS=0V V GS= 20V, V DS=0V I D =-250A, V DS= V GS V GS=-10V, I D=-2.4A V GS=-4.5V, I D=-1.2A V DS=-10V,I D=-1.2A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (... |
Description |
P-channel MOSFET 30V P-CHANNEL ENHANCEMENT MODE MOSFET 3800 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-187AA
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File Size |
204.38K /
7 Page |
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it Online |
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