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Mitsubishi Electric Corporation
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| Part No. |
QM50DY-H
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| OCR Text |
0.5 6.5 22.5 31 (8) c 1 c 2 e 1 e 2 e 2 e 1 b 1 b 2 b 1 b 2 e 1 e 2 label mitsubishi transistor modules qm50dy-h medium power switching use ...65a Ci c =50a (diode forward voltage) i c =50a, v ce =2v/5v v cc =300v, i c =50a, i b1 =Ci b2 =1a tr... |
| Description |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
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| File Size |
76.98K /
5 Page |
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Inchange Semiconductor
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| Part No. |
BU607
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| OCR Text |
...ast switching speed- : t f = 0.75 s(max) low saturation voltage- : v ce(sat) = 1.0v(max)@ i c = 5a applications designed fo...65a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 5a; i b = 0.65a b 1.3 v ... |
| Description |
Silicon NPN Power Transistor
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| File Size |
102.85K /
2 Page |
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it Online |
Download Datasheet |
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Inchange Semiconductor
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| Part No. |
BU607D
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| OCR Text |
...ast switching speed- : t f = 0.75 s(max) low saturation voltage- : v ce(sat) = 1.0v(max)@ i c = 5a applications designed for ...65a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 5a; i b = 0.65a b 1.3 v ... |
| Description |
Silicon NPN Power Transistor
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| File Size |
159.53K /
2 Page |
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it Online |
Download Datasheet |
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Advanced Power Technology Ltd.
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| Part No. |
APT65GP60L2DQ2 APT65GP60L2DQ2G
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| OCR Text |
... max. lead temp. for soldering: 0.063" from case for 10 sec. apt w ebsite - http://www .a dv ancedpo we r. com caution: these devices ar...65a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 600v i nductive switching (25c) v c... |
| Description |
POWER MOS 7 IGBT
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| File Size |
441.66K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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