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periphery Datasheet PDF File

For periphery Found Datasheets File :: 642 Search Time::2.281ms
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				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text	...n gate length with a total gate periphery (width) of 200 microns. Proven gold based metalization systems and nitride passivation assure rugged, reliable devices. 5965-8726E 0.4 0 0 4 8 12 16 20 FREQUENCY (GHz) ...
Description	1.5-18GHz surface mount pseudomorphic HEMT 2-18 GHz Ultra Low Noise Pseudomorphic HEMT
File Size	41.62K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text	...n gate length with a total gate periphery (width) of 200 microns. Proven gold-based metallization system and nitride passivation assure rugged, reliable devices. 36 5-79 5965-4747E ATF-36163 Absolute Maximum Ratings[1] Symbol VDS...
Description	1.5-18 GHz Surface Mount Pseudomorphic HEMT
File Size	84.64K / 10 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-44101
OCR Text	...ween source fingers. Total gate periphery is 5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. This device is suitable for applications in space, airborne, military ground and s...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	60.35K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45101
OCR Text	...tween drain fingers. Total gate periphery is 2.5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. This device is suitable for applications in space, airborne, military ground and...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	40.00K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45171
OCR Text	...tween drain fingers. Total gate periphery is 2.5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. This device is suitable for applications in space, airborne, military ground and...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	39.13K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-46101
OCR Text	...tween drain fingers. Total gate periphery is 1.25 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. This device is suitable for applications in space, airborne, military ground an...
Description	2-10 GHz Medium Power Gallium Arsenide FET
File Size	40.16K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-46171
OCR Text	...tween drain fingers. Total gate periphery is 1.25 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. This device is suitable for applications in space, airborne, military ground an...
Description	2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
File Size	39.26K / 3 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL-W M5M5V208FP-12L-W M5M5V208FP-70LL-W M5M5V208FP-70L-W M5M5V208FP-85LL-W M5M5V208FP-85L-W M5M5V208KR-10LL-W M5M5V208KR-10L-W M5M5V208KR-12LL-W M5M5V208KR-12L-W M5M5V208KR-70LL-W M5M5V208KR-70L-W M5M5V208KR-85LL-W M5M5V208KR-85L-W M5M5V208KV-10LL-W M5M5V208KV-10L-W M5M5V208KV-12LL-W M5M5V208KV-12L-W M5M5V208KV-70LL-W M5M5V208KV-70L-W M5M5V208KV-85LL-W M5M5V208KV-85L-W M5M5V208RV-10LL-W M5M5V208RV-10L-W M5M5V208RV-12LL-W M5M5V208RV-12L-W M5M5V208RV-70LL-W M5M5V208RV-70L-W M5M5V208RV-85LL-W M5M5V208RV-85L-W M5M5V208VP-10LL-W M5M5V208VP-10L-W M5M5V208VP-12LL-W M5M5V208VP-12L-W M5M5V208VP-70LL-W M5M5V208VP-70L-W M5M5V208VP-85LL-W M5M5V208VP-85L-W M5V208W M5M5V208FP-85-W M5M5V208KR-85-W M5M5V208RV-85-W M5M5V208VP-85-W M5M5V208KV-85-W
OCR Text	...sistor(TFT) load cells and CMOS periphery results in a high density and low power static RAM. The M5M5V208 is designed for memory applications where high reliability, large storage, simple interfacing and battery back-up are important desig...
Description	From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
File Size	87.80K / 7 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M5V208FP-10L M5M5V208FP-10LL M5M5V208FP-12L M5M5V208FP-12LL M5M5V208FP-70L M5M5V208FP-70LL M5M5V208FP-85L M5M5V208FP-85LL M5M5V208KR-10L M5M5V208KR-10LL M5M5V208KR-12L M5M5V208KR-12LL M5M5V208KR-70L M5M5V208KR-70LL M5M5V208KR-85L M5M5V208KR-85LL M5M5V208KV-10L M5M5V208KV-10LL M5M5V208KV-12L M5M5V208KV-12LL M5M5V208KV-70L M5M5V208KV-70LL M5M5V208KV-85L M5M5V208KV-85LL M5M5V208RV-10L M5M5V208RV-10LL M5M5V208RV-12L M5M5V208RV-12LL M5M5V208RV-70L M5M5V208RV-70LL M5M5V208RV-85L M5M5V208RV-85LL M5M5V208VP-10L M5M5V208VP-10LL M5M5V208VP-12L M5M5V208VP-12LL M5M5V208VP-70L M5M5V208VP-70LL M5M5V208VP-85L M5M5V208VP-85LL M5V208S
OCR Text	...sistor(TFT) load cells and CMOS periphery results in a high density and low power static RAM. The M5M5V208 is designed for memory applications where high reliability, large storage, simple interfacing and battery back-up are important desig...
Description	From old datasheet system 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
File Size	75.19K / 7 Page	View it Online	Download Datasheet

				TEMIC[TEMIC Semiconductors]
Part No.	U3741BM-M2FL U3741BM-M2FLG3 U3741BM-M3FL U3741BM-M3FLG3 U3741BM
OCR Text	...on or for controlling external periphery D Communication to mC possible via a single, bi-directional data line D Supply voltage 4.5 V to 5.5 V, D Single-ended RF input for easy adaptation to l/4 antenna or printed antenna on PCB ...
Description	UHF ASK/FSK Receiver
File Size	417.50K / 25 Page	View it Online	Download Datasheet

For periphery Found Datasheets File :: 642 Search Time::2.281ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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