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insulated-gate Datasheet PDF File

For insulated-gate Found Datasheets File :: 4148 Search Time::1.516ms
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				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BSM75GD120DN2 075D12N2 C67070-A2516-A67
OCR Text	...ree-wheel diodes * Package with insulated metal base plate Type BSM 75 GD 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package ECONOPACK 3 Ordering Code...
Description	IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT From old datasheet system
File Size	185.11K / 9 Page	View it Online	Download Datasheet

				意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	BTB08-400A BTB08-400S BTB08-600A BTB08-600S BTB08-700A BTB08-700S BTB08S BTA08-400A BTA08-400S BTA08-600A BTA08-600S BTA08-700A BTA08-700S BTA08S 2924 BTA08 BTA08A BTB08A
OCR Text	...RMATION Package IT(RMS) A BTA (Insulated) 8 VDRM / VRRM V 400 600 700 BTB (Uninsulated) 400 600 700 S X X X X X X Sensitivity Specification...gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zt h( j-c) ...
Description	Sensitive Gate Triacs(双向可控 From old datasheet system
File Size	67.44K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM200DY-28H
OCR Text	INSULATED TYPE A B F F G P C2E1 E2 C1 G2 E2 C D G1 E1 J P K N - DIA. (4 TYP.) M M Q - M6 THD (3 TYP.) R TAB#110 t=0...Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current...
Description	IGBT Modules:1400V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.59K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM300DY-28H
OCR Text	INSULATED TYPE A B M P - DIA. (4 TYP.) C2E1 E2 C1 E2 C2 R L D C F C1 E1 R G S - M6 THD. (3 TYP) N K K G H...Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current...
Description	IGBT Modules:1400V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.35K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM50DY-28H
OCR Text	INSULATED TYPE A B C F F K E2 G2 Q - DIA. (2 TYP.) D M G1 E1 J C2E1 E2 C1 N (3 TYP.) R S - M5 THD (3 TYP.) R R ...Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current...
Description	IGBT Modules:1400V MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	48.00K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... Powerex Power Semiconductors Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
Part No.	CM75DY-28H
OCR Text	INSULATED TYPE A B C F F K E2 G2 Q - DIA. (2 TYP.) D M G1 E1 J C2E1 E2 C1 N (3 TYP.) R S - M5 THD (3 TYP.) R R ...Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current...
Description	HIGH POWER SWITCHING USE INSULATED TYPE IGBT Modules:1400V
File Size	47.54K / 4 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	MSAGX75F60A
OCR Text	...s 2.7 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features * * * * * * * Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low packa...
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
File Size	45.08K / 2 Page	View it Online	Download Datasheet

				Microsemi, Corp. MICROSEMI[Microsemi Corporation]
Part No.	MSAGX75L60A
OCR Text	...s 1.8 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features * * * * * * * Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low packa...
Description	LJT 8C 8#20 PIN WALL RECP 75 A, 600 V, N-CHANNEL IGBT N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
File Size	47.77K / 2 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	MSAHX75L60C
OCR Text	...s 1.8 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features * * * * * * * Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low packa...
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
File Size	49.41K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SGW13N60UFD SGW13N60UFDTM
OCR Text	Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features ...
Description	Discrete, High Performance IGBT with Diode Ultra-Fast IGBT
File Size	594.42K / 8 Page	View it Online	Download Datasheet

For insulated-gate Found Datasheets File :: 4148 Search Time::1.516ms
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