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  high-freguency Datasheet PDF File

For high-freguency Found Datasheets File :: 71    Search Time::2.032ms    
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    KODENSHI KOREA
Part No. KK4006B
OCR Text ... to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any vol...Freguency Maximum Clock Input Rise or Fall Time 100 50 40 150 80 60 200 90 60 200 100 80 300 1...
Description CMOS 18-Stage Static Shift Register

File Size 259.74K  /  7 Page

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    AGM3224I-1

AZ Displays
Part No. AGM3224I-1
OCR Text ... data should be all "ON" (D0~D7=HIGH). * VDD=5.0V, VLED=4.3V, ILED=288mA,VLCD should be adjusted at the voltage where the peak contrast is obtained by naked eyes as the "All Q" pattern. Note 2. Measurement of the following 5 points on the d...
Description SPECIFICATIONS FOR LIQUID CRYSTAL DISPLAY

File Size 395.36K  /  14 Page

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    K7K3236U2C K7K3218U2C

Samsung semiconductor
Part No. K7K3236U2C K7K3218U2C
OCR Text ...e Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 1.8 V ) Output Powe...
Description 1Mx36 & 2Mx18 DDRII CIO b2 SRAM

File Size 439.18K  /  19 Page

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    K7K3236T2C K7K3218T2C

Samsung semiconductor
Part No. K7K3236T2C K7K3218T2C
OCR Text ...e Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 1.8 V ) Output Powe...
Description 1Mx36 & 2Mx18 DDRII CIO b2 SRAM

File Size 439.86K  /  19 Page

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    K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330

Samsung semiconductor
Maxim Integrated Products, Inc.
Part No. K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330
OCR Text ...e Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 1.8 V ) Output Powe...
Description 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

File Size 401.35K  /  19 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K7I323682M K7I321882M K7M161825A-QCI65
OCR Text ...conditions. 4. Reserved pin for high density name change from NC to Vss/SA 5. Delete AC test condition about Clock Input timing Reference Le...freguency scaling. * I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O. ...
Description 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
512Kx36 & 1Mx18 Pipelined NtRAM

File Size 375.01K  /  17 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K7I643682M-FC30 K7I641882M K7I641882M-EI16 K7I641882M-EI20 K7I641882M-EI25 K7I641882M-EI30 K7I641882M-FC16 K7I641882M-FC20 K7I641882M-FC25 K7I641882M-FC30 K7I643682M K7I643682M-EI16 K7I643682M-EI20 K7I643682M-EI25 K7I643682M-EI30 K7I643682M-FC16 K7I643682M-FC20 K7I643682M-FC25
OCR Text ...e Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 1.8 V ) Output Powe...
Description 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)

File Size 301.37K  /  17 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K7J163682B K7J161882B
OCR Text ...e Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 1.8 V ) Output Powe...
Description 512Kx36 & 1Mx18 DDR II SIO b2 SRAM

File Size 371.63K  /  17 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K7J323682M K7J321882M
OCR Text ...conditions. 3. Reserved pin for high density name change from NC to Vss/SA 4. Delete AC test condition about Clock Input timing Reference Le...freguency scaling. * I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/ -0.1V for 1.8V I/O....
Description 1Mx36 & 2Mx18 DDR II SIO b2 SRAM

File Size 304.26K  /  17 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K7J643682M-FECI30 K7J641882M K7J641882M-FC16 K7J641882M-FC20 K7J641882M-FC25 K7J641882M-FC30 K7J641882M-FECI16 K7J641882M-FECI20 K7J641882M-FECI25 K7J641882M-FECI30 K7J643682M K7J643682M-FC16 K7J643682M-FC20 K7J643682M-FC25 K7J643682M-FC30 K7J643682M-FECI16 K7J643682M-FECI20 K7J643682M-FECI25
OCR Text ...e Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 1.8 V ) Output Powe...
Description 72Mb M-die DDRII SRAM Specification

File Size 312.35K  /  17 Page

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For high-freguency Found Datasheets File :: 71    Search Time::2.032ms    
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