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MOTOROLA[Motorola, Inc]
ON Semi
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| Part No. |
MJE16106 ON2015
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| OCR Text |
...1.3 s (Typ) @ 100_C * Ultrafast fbsoa Specified * 100_C Performance Specified for: RBSOA Inductive Load Switching Saturation Voltages Leakages MAXIMUM RATINGS
POWER TRANSISTORS 8 AMPERES 400 VOLTS 100 AND 125 WATTS
IIIIIIIIIIIIIIIIIII... |
| Description |
POWER TRANSISTORS 8 AMPERES 400 VOLTS 100 AND 125 WATTS
From old datasheet system
SEMICONDUCTOR TECHNICAL DATA
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| File Size |
380.28K /
10 Page |
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Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10
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| OCR Text |
... BIASED SAFE OPERATING AREA The fbsoa curves define the maximum drain-to-source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limi... |
| Description |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
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| File Size |
236.13K /
10 Page |
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it Online |
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ON Semi
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| Part No. |
MMFT3055EL_D ON2224
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| OCR Text |
... BIASED SAFE OPERATING AREA The fbsoa curves define the maximum drain-to-source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limi... |
| Description |
N-hannel Enhancement-ode Logic Level SOT24
From old datasheet system
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| File Size |
201.65K /
10 Page |
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it Online |
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ON Semi
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| Part No. |
MJW16010A ON2058
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| OCR Text |
...ges Leakage Currents * Extended fbsoa Rating Using Ultra-fast Rectifiers * Extremely High RBSOA Capability
*Motorola Preferred Device
POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS
II I IIIIIIIIIIIIIIIIIIIIIII II II I II ... |
| Description |
1 kV SWITCHMODE Series
From old datasheet system
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| File Size |
318.65K /
10 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
MJH6287 MJH6284 ON2053
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| OCR Text |
...
Figure 4. Thermal Response
fbsoa, FORWARD BIAS SAFE OPERATING AREA
50 IC, COLLECTOR CURRENT (AMPS) 20 10 5.0 2.0 1.0 0.5
SECOND BREAKDOWN LIMITED
0.1 ms 0.5 ms 1.0 ms 5.0 ms
dc
TJ = 150C
0.2 0.1 0.05 2.0
BONDING WIRE L... |
| Description |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
20 AMPERE COMPLEMENTARY SILICON
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| File Size |
139.54K /
6 Page |
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Vishay
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| Part No. |
BUF646A BUF646 BUF646_A
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| OCR Text |
...
Figure 3. VCEW - Diagram
100 fbsoa IC - Collector Current ( A ) 10 Tj 100 IC - Collector Current ( A )
Figure 6. Ptot vs.Tcase
v125C
RBSOA 10
Tj
v125C
1 BUF646 0.1 tr 0.01 1 10 BUF646A
1
0.1 BUF646 0.01
BUF646A... |
| Description |
Silicon NPN High Voltage Switching Transistor
From old datasheet system
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| File Size |
88.42K /
8 Page |
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it Online |
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