dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 11m
G S
ID = 85A
Description
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techn...
Description
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
....T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor C...
Description
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
...Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 40V
G S
RDS(on) = 0.009 ID = 100A
Description
Fifth Generation HEXFETs from International Rectifier utilize advan...
Description
Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?
...Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
VDSS = 20V RDS(on) = 4.0m
S
ID = 174A
Description
Specifically designed for Automotive application...
Description
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)
...Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 20V
G S
RDS(on) = 4.0m ID = 180A
Description
Specifically designed for Automotive applications...
Description
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)
...5C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala...
dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V
G S
RDS(on) = 0.036 ID = 42A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques t...
Description
Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
...vailable in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175C Operating Temperature Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-...
dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description (R)
l l
IRF1404S IRF1404L
D
VDSS = 40V
G S
RDS(on) = 0.004 ID = 162A
Seventh Generation HEXFET Power MOSFETs from International ...
Description
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 40V
G S
RDS(on) = 0.004 ID = 162A
Description
Seventh Generation HEXFET(R) Power MOSFETs from International Rectifier utilize advanced proce...
Description
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)