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Advanced Power Technology, Ltd.
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Part No. |
APTGT300DA170
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OCR Text |
...g (25c) v ge = 15v v bus = 900v i c = 300a r g = 2.2 ? 180 ns t d(on) turn-on delay time 400 t r rise time 50 t d(off) turn-off delay time 800 t f fall time 300 ns e on turn-on switching en... |
Description |
Boost chopper Trench Field Stop IGBT Power Module 升压斩波器沟槽场站IGBT功率模块
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File Size |
265.81K /
5 Page |
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it Online |
Download Datasheet
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STMicroelectronics N.V.
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Part No. |
DIM150CHS17-E
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OCR Text |
... 1mhz - - t j = 125?c, v cc = 900v, i 1 t p 10 s, v ce(max) = v ces ?l*. di/dt i 2 iec 60747-9 parameter collector cut-off current gate leakage current gate threshold voltage collector-emitter saturation voltage diode forward cur... |
Description |
IGBT Modules - Half Bridge IGBT模块-半桥
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File Size |
145.74K /
8 Page |
View
it Online |
Download Datasheet
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Advanced Power Technology, Ltd.
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Part No. |
APTGT150A170
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OCR Text |
...g (25c) v ge = 15v v bus = 900v i c = 150a r g = 4.7 ? 180 ns t d(on) turn-on delay time 400 t r rise time 50 ...2.2 v f diode forward voltage i f = 150a t j = 125c 1.9 v t j = 25c 385 t rr ... |
Description |
Phase leg Trench Field Stop IGBT Power Module 相脚戴场站IGBT功率模块
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File Size |
266.30K /
5 Page |
View
it Online |
Download Datasheet
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Price and Availability
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