800v-4.6-1.9a- pdf Datasheet P3 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : SJ2025 CJB71N90 FW323 73M05 4K275 000WD N5627 D74L4B
	Product Description
	Full Text Search

800v-4.6-1.9a- Datasheet PDF File

For 800v-4.6-1.9a- Found Datasheets File :: 163 Search Time::1.828ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				NTE[NTE Electronics]
Part No.	NTE2399 NTE2395
OCR Text	...te4 VDS = 1000V, VGS = 0V VDS = 800V, VGS = 0V, TJ = +125C VGS = -20V VGS = 20V ID = 3.1A, VDS = 400V, VGS = 10V, Note 4 Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ...
Description	MOSFET N-Ch, Enhancement Mode High Speed Switch
File Size	27.34K / 3 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IDB09E120 Q67040-S4384 Q67040-S4479 IDP09E120
OCR Text	...tics Reverse recovery time V R=800V, IF=9A, di F/dt=750A/s, Tj=25C V R=800V, IF=9A, di F/dt=750A/s, Tj=125C V R=800V, IF=9A, di F/dt=750A/s...4 6.5 6.6 A nC - Peak reverse current V R=800V, IF = 9 A, diF/dt=750A/s, Tj=25C V R=800V, IF =9A...
Description	Fast Switching EmCon Diode 快速开关快恢复二极 From old datasheet system Silicon Power Diodes - 9A EmCon in TO220-2 Silicon Power Diodes - 9A EmCon in TO263
File Size	195.90K / 9 Page	View it Online	Download Datasheet

				Fuji Semiconductors, Inc.
Part No.	2SK2648
OCR Text	...D=1mA VGS=0V ID=1mA VDS=VGS VDS=800V VGS=0V VGS=35V VDS=0V ID=4.5A VGS=10V ID=4.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=9A VGS=10V RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C ...
Description	TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247VAR From old datasheet system
File Size	69.48K / 4 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IGW03N120H2NBSP IGP03N120H2NBSP IGB03N120H2NBSP IGB03N120H2 Q67040-S4599 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4598 IGB03N120H2E3045A
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 82) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...4. Collector current as a function of case temperature (VGE 15V, Tj 150C) Power Semiconductors ...
Description	High Speed CMOS Logic Hex Non-Inverting Buffers 16-SOIC -55 to 125 高 -技 From old datasheet system HighSpeed 2-Technology IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO247 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO220 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT D2Pak 1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
File Size	393.63K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q67040-S4594 Q67040-S4595 IKB03N120H2E3045A INFINEONTECHNOLOGIESAG-Q67040-S4594
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 82) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...4. Collector current as a function of case temperature (VGE 15V, Tj 150C) Power Semiconductors ...
Description	IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak 1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package. IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO247 IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO220 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
File Size	428.03K / 15 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	RF1S4N100SM RFP4N100 FN2457
OCR Text	...50A VDS = 1000V, VGS = 0V VDS = 800V, VGS = 0V, TC = 150oC MIN 1000 2 VGS = 20V, ID = 3.9A, VDS = 800V (Figure 13) TYP MAX 4 25 100 100 3.500 30 50 170 50 120 UNITS V V A A nA ns ns ns ns nC oC/W oC/W Drain to Source Breakdown Voltage ...
Description	4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs From old datasheet system
File Size	45.56K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SSH8N80A
OCR Text	800V * * * * * * * Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Opera...4 Max. 8 32 1.4 - - Units A V ns C Test Conditions Integral reverse pn-diode in the MOSFET TJ=25C, I...
Description	From old datasheet system N-CHANNEL POWER MOSFET
File Size	248.38K / 8 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SC5778
OCR Text	...l ICBO ICES IEBO Conditions VCB=800V, IE=0 VCE=1600V, RBE=0 VEB=4V, IC=0 40 Ratings min typ max 10 1.0 200 Unit A mA mA Continued on next...4 2SC5778 Continued from preceding page. Parameter DC Current Gain Collector-to-Emitter Saturat...
Description	From old datasheet system Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
File Size	29.98K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SSH9N80A
OCR Text	...e Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.) SSH9N80A BVDSS = 800 V RDS(on) = 1.3 ID = 9 A TO-3P 1 2 3 1.Gat...4 O* 4 O See Fig 7 VDS=5V,ID=250A 2020 2600 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=400V,...
Description	Advanced Power MOSFET
File Size	246.79K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQP4N80
OCR Text	800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...4.0 130 1.04 -55 to +150 300 - Derate above 25C Operating and Storage Temperature Range Maximum l...
Description	800V N-Channel MOSFET
File Size	649.38K / 8 Page	View it Online	Download Datasheet

For 800v-4.6-1.9a- Found Datasheets File :: 163 Search Time::1.828ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |