...
Power Transistors
PC T a
6
2SC2497, 2SC2497A
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
4.0 TC=25C 3.5 10
VCE(sat) IC
IC/IB=10
Collector power dissipation PC (W)
5
(1)With a 100x100x2mm Al heat s...
Description
Silicon NPN epitaxial planar type(For low-frequency power amplification)
...PC Tj Tstg
Rating -160 -120 -6 -8 80 150 -55~150
Unit V V V A W C C
ELECTRICAL CHARACTERISTICS (Ta=25C) C
Characterristics Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Colle...
Description
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
...PC Tj Tstg
Rating -100 -100 -6 -7 70 150 -55~150
Unit V V V A W
ELECTRICAL CHARACTERISTICS (TA=25)
Characteristic Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector ...
Description
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
...PC Tj Tstg
Rating -160 -120 -6 -9 90 150 -55~150
Unit V V V A W
ELECTRICAL CHARACTERISTICS (TA=25)
Characteristic Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector ...
Description
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
...PC Tj Tstg
Rating -200 -140 -6 -10 100 150 -55~150
Unit V V V A W C C
ELECTRICAL CHARACTERISTICS (Ta=25C) C
Characterristic Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Coll...
Description
PNP PLANAR TRANSISTOR(AUDIO POWER AMPLIFIER, DC TO DC CONVERTER)
...- -- -0.64 Max -- -- -- -0.5 -0.6 320 -- -- V Unit V V V A V Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -20 V, IE = 0 I C = -150 mA, IB = -15 mA VCE = -3 V, IC = -10 mA VCE = -3 V, IC = -500 mA (Pulse ...