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Comset Semiconductors
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| Part No. |
BSS60A
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| OCR Text |
61a-62a comset semiconductors 1/3 s s i i l l i i c c o o n n p p l l a a n n a a r r e e p p i i t t a a x x i i a a l l t t r r a a n n s s i i s s t t o o r r s s they are pnp transistors mounted in to-3... |
| Description |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS
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| File Size |
116.96K /
3 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9N306AS3ST ISL9N306AP3 ISL9N306AS3STNL
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| OCR Text |
...= 250A ID = 75A, VGS = 10V ID = 61A, VGS = 4.5V 1 3 V 0.0052 0.0060 0.0085 0.0095
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge a... |
| Description |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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| File Size |
202.72K /
11 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRL3102S
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| OCR Text |
...V
G S
RDS(on) = 0.013W ID = 61A
Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results ... |
| Description |
Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A) 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）\u003d0.013瓦特，身份证\u003d 61A条）
Power MOSFET(Vdss=20V Rds(on)=0.013w Id=61A)
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| File Size |
86.82K /
8 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
FDB3652NL
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| OCR Text |
...nel powertrench ? mosfet 100v, 61a, 16m ? features ?r ds(on) = 14m ? (typ.), v gs = 10v, i d = 61a q g (tot) = 41nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single pulse and repetitive pulse) ... |
| Description |
N-Channel Power Trench MOSFET, 100V, 61A, 0.016 Ohms 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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| File Size |
201.36K /
11 Page |
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it Online |
Download Datasheet |
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Price and Availability
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