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  -2.6a Datasheet PDF File

For -2.6a Found Datasheets File :: 707    Search Time::2.391ms    
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    FRK9160R FRK9160D FN3244 FRK9160H

INTERSIL[Intersil Corporation]
Part No. FRK9160R FRK9160D FN3244 FRK9160H
OCR Text ...-10V, ID = 40A VGS = -10V, ID = 26A VDD = -50V, ID = 40A Pulse Width = 3s Period = 300s, Rg = 10 0 VGS 10 (See Test Circuit) MIN -100 -2.0 7 86 158 -2 19 34 -0.6 MAX -4.0 100 100 1 0.025 0.25 100 -3.57 0.085 150 900 ns 700 500 28 346 632 ...
Description 40A/ -100V/ 0.085 Ohm/ Rad Hard/ P-Channel Power MOSFETs
40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system

File Size 47.27K  /  6 Page

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Part No. MT8VDDT3264HDG-40BXX MT8VDDT3264HDY-265XX MT8VDDT3264HDG-335XX MT8VDDT6464HDG-265XX
OCR Text ... (133 mhz), 266 mt/s, cl = 2 1 -26a ? 7.5ns (133 mhz), 266 mt/s, cl = 2.5 1 -265 pcb height: 31.75mm (1.25in) notes: 1. the values of t rcd and t rp for -335 modules show 18ns to al ign with industry specifications; actual ddr sdram dev...
Description 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200

File Size 390.85K  /  13 Page

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    APT44GA60B APT44GA60S

Microsemi Corporation
Part No. APT44GA60B APT44GA60S
OCR Text ... 0V, IC = 1.0mA VGE = 15V, IC = 26A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Curre...
Description High Speed PT IGBT

File Size 213.52K  /  6 Page

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Part No. MT8VDDT3264HDG-265A1 MT8VDDT3264HDG-262XX
OCR Text ...ns (133 mhz), 266 mt/s, cl = 2 -26a 1 7.5ns (133 mhz), 266 mt/s, cl = 2.5 -265 pcb 1.25in. (31.75mm) 1.25in. (31.75mm) table 1: address table 128mb 256mb 512mb 1gb refresh count 4k 8k 8k 8k row addressing 4k (a0?a11) 8k (a0?a12) 8k (a0?...
Description 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200

File Size 586.18K  /  32 Page

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    ESCA-5000 ESCA-5001 ESCA-5002 ESCA-5003 ESCA-5005 ESMC-5000 ESMC-5000DRL ESMC-5001 ESMC-5001DRL ESMC-5002 ESMC-5002DRL E

Astrodyne Corporation
Part No. ESCA-5000 ESCA-5001 ESCA-5002 ESCA-5003 ESCA-5005 ESMC-5000 ESMC-5000DRL ESMC-5001 ESMC-5001DRL ESMC-5002 ESMC-5002DRL ESMC-5003 ESMC-5003DRL ESMC-5005 ESMC-5005DRL EDMC-5006 EDMC-5006DRL EDMC-5007 EDCC-5007DRL EDMC-5007DRL EDCA-5006 EDCA-5007 EDMA-5006 EDMA-5007 ESMA-5000 ESMA-5001 ESMA-5002 ESMA-5003 ESMA-5005
OCR Text ....56A 1.5A 0.63A 0.5A 0.35A +/-0.26A +/-0.21A +/-0.26A +/-0.21A +/-0.26A +/-0.21A WWW.ASTRODYNE.COM ASTRODYNE USA: 1-800-823-8082 ASTRODYNE PACIFIC: 886-2-26983458 ASTRODYNE EUROPE: 353 51 561060 5 W U l t r a m i n i a t u re Medic...
Description 5W Ultraminiature Encapsulated Switching Power Supplies

File Size 705.84K  /  5 Page

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    IRH8250 IRH7250

IRF[International Rectifier]
Part No. IRH8250 IRH7250
OCR Text ... 200V 200V RDS(on) 0.11 0.11 ID 26A 26A Features: n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron...
Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

File Size 313.63K  /  12 Page

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    IRHM8250 IRHM7250 JANSR2N7269 IRHM3250 IRHM4250 JANSF2N7269 JANSG2N7269

IRF[International Rectifier]
Part No. IRHM8250 IRHM7250 JANSR2N7269 IRHM3250 IRHM4250 JANSF2N7269 JANSG2N7269
OCR Text ... (Si) RDS(on) 0.10 0.10 0.10 ID 26A 26A 26A 26A IRHM7250 JANSR2N7269 200V, N-CHANNEL REF: MIL-PRF-19500/603 (R) TM RAD Hard HEXFET TECHNOLOGY QPL Part Number JANSR2N7269 JANSF2N7269 JANSG2N7269 JANSH2N7269 1000K Rads (Si) 0.10 HEXFE...
Description 200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

File Size 266.93K  /  12 Page

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    IRHN8250 IRHN7250

IRF[International Rectifier]
Part No. IRHN8250 IRHN7250
OCR Text ... 200V 200V RDS(on) 0.10 0.10 ID 26A 26A Features: s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Ne...
Description TRANSISTOR N-CHANNEL(BVdss=200V Rds(on)=0.10ohm Id=26A)
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)

File Size 523.50K  /  14 Page

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    APTC90VDA12T1G

Microsemi Corporation
Part No. APTC90VDA12T1G
OCR Text ...nit A m V nA VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charg...
Description Dual boost chopper Super Junction MOSFET Power Module

File Size 218.81K  /  6 Page

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    APTC90DDA12CT1G

Microsemi Corporation
Part No. APTC90DDA12CT1G
OCR Text ...nit A m V nA VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charg...
Description Dual boost chopper Super Junction MOSFET SiC chopper diode

File Size 218.72K  /  6 Page

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