|
|
![](images/bg04.gif) |
ST Microelectronics
|
Part No. |
STW8NB100
|
OCR Text |
... Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VG...Cross-over Time Test Conditions VDD = 800V, ID = 7 A, RG = 4.7, VGS = 10V (see test circuit, Figure ... |
Description |
N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET
|
File Size |
253.36K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
SGS Thomson Microelectronics
|
Part No. |
STW8NB100
|
OCR Text |
... 100 Typ. Max. Unit V A A nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Gate-body Leakage Current...Cross-over Time Test Conditions V DD = 800 V R G = 4.7 ID = 7 A V GS = 10 V Min. Typ. 32 32 40 Max.... |
Description |
N - CHANNEL 1000V - 1.2W - 8A - TO-247, PowerMESH MOSFET
|
File Size |
55.84K /
6 Page |
View
it Online |
Download Datasheet
|
|
![](images/findchips_sm.gif)
Price and Availability
|