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    NE3516S02-T1C-A NE3516S02-T1D-A NE3516S02-15

Renesas Electronics Corporation
Part No. NE3516S02-T1C-A NE3516S02-T1D-A NE3516S02-15
OCR Text x to ku band low noise and high-gain features ? low noise figure and high associated gain nf = 0.35 db typ., g a = 14 db typ. @ f = 12 ghz, v ds = 2 v, i d = 10 ma nf = 0.35 db typ., g a = 13.5 db typ. @ f = 12 ghz, v ds = 2 ...
Description N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

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    FLX107MH-12

Eudyna Devices Inc
Part No. FLX107MH-12
OCR Text X, Ku Band Power GaAs FET FEATURES * * * * * High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: add = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs ...
Description X, Ku Band Power GaAs FET

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    NE3515S02-T1C-A

California Eastern Labs
Part No. NE3515S02-T1C-A
OCR Text ...fect transistor ne351 5 s02 x to ku - band super low noise amplifier n - channel hj - fet document no. pg10 708 ej01v0ds (1st edition) date published february 200 8 ns features ? super low noise figure , ...
Description X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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    MICRONETICS INC
Part No. RFN25C-N3A RFN25C-Y1B RFN25C1-Y1B RFN25C2-N3B RFN25C1-Y0B
OCR Text ...o 2.0 ghz 30(min) n,n1 q, x, w, y rfn25s 2.0 to 4.0 ghz 30(min) n,n1 q, x, w, y rfn25c 4.0 to 8.0 ghz 30(min) n,n1 q, ...ku ? k ? ka model frequency waveguide rfn25c1 3.95 to 5.85 ghz wr-187 rfn25c2 5.85 ...
Description NOISE SOURCE, 4000-8000MHz, -144dBm/Hz, 30dB, PANEL MOUNT
NOISE SOURCE, -149dBm/Hz, 25dB, PANEL MOUNT
NOISE SOURCE, 5850-8200MHz, -149dBm/Hz, 25dB, PANEL MOUNT

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    FLM0910-4F

Eudyna Devices Inc
Part No. FLM0910-4F
OCR Text X, Ku-Band Internally Matched FET FEATURES * * * * * * High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: add = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = ...
Description X, Ku-Band Internally Matched FET

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    FLM0910-8F

Eudyna Devices Inc
Part No. FLM0910-8F
OCR Text X, Ku-Band Internally Matched FET FEATURES * * * * * * High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: add = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = ...
Description X, Ku-Band Internally Matched FET

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    FLM1011-12F

Eudyna Devices Inc
Part No. FLM1011-12F
OCR Text X, Ku-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: add = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout...
Description X, Ku-Band Internally Matched FET

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    FLM1213-4F

Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
Part No. FLM1213-4F
OCR Text X, Ku-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 6.5dB (Typ.) High PAE: add = 28% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout...
Description Ku-Band Internally Matched FET

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    FLM1213-8F

Eudyna Devices Inc
Part No. FLM1213-8F
OCR Text X, Ku-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 6.5dB (Typ.) High PAE: add = 28% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout...
Description X, Ku-Band Internally Matched FET

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