...55 to +150
Unit V V V A A mA w w
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Curren...2 Unit mV mV mV mV V V V V V ns ns ns ns
V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)E...
...-55 to +150
Unit V V V A A A w w
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Curren...2 Unit mV mV mV mV V V V V V ns ns ns ns
V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)E...
...-55 to +150
Unit V V V A A A w w
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Curren...2.5A, IB=(-)125mA IC=(-)2.5A, IB=(-)125mA (-50) 60 (-)50 (-)6 30 (250) 300 15 Ratings min typ (-150)...
Description
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications PNP/NPN Epitaxial Planar Silicon Transistors TRANSISTOR,BJT,NPN,50V V(BR)CEO,7A I(C),TO-220ML From old datasheet system
...)5 (-)5 (-)7 1.3 Unit V V V A A w w
1.7
2.4
1 : Base 2 : Collector 3 : Emitter SANYO : TO126ML
Tc=25C
10 150 -55 to +150
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Curr...
...55 to +150
Unit V V V A A mA w
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current ...2 Conditions Ratings min typ max -0.1 -0.1 560 MHz pF mV V Unit A A
Continued on next page.
An...
...0 -55 to +150
Unit V V V A A w w C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE(1) hFE(2) Conditions VCB=(--)250V, IE=0 VEB=(--)4V, IC=0 VCE=(--...
...50 -55 to +150 Unit V V V A A A w w C C
Any and all SANYO products described or contained herein do not have specifications that can hand...2.5A, IB=(-)125mA IC=(--)2.5A, IB=(-)125mA IC=(--)10A, IE=0 IC=(--)1mA, RBE= IE=(-)10A, IC=0 See spe...
...--55 to +150 Unit V V V V A A A w w C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current D...2 Ratings min typ max (--)1 (--)1 560 MHz pF mV mV V V V V V ns ns ns Unit A A
Swicthing Time Tes...
Description
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251VAR 5-Pin µP Supervisory Circuits with watchdog and Manual Reset TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252VAR Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay PNP/NPN Epitaxial Planar Silicon Transistors NPN Epitaxial Planar Silicon Transistors High Current Switching Applications PNP Epitaxial Planar Silicon Transistors High Current Switching Applications 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
... -55 to +150 Unit V V V V A A A w w C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current D...2 Ratings min typ max (--)0.1 (--)0.1 560 MHz pF mV mV V V V V V ns ns ns Unit A A
Swicthing Time...