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For vcc-max Found Datasheets File :: 150+ Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Sanken Electric Co.,Ltd.
Part No.	STR-BS6301 STRS6301 STR-S6301
Description	Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns; SWITCHING REGULATOR HYRRTD lC
File Size	1,760.38K / 9 Page	View it Online	Download Datasheet

				ICSI[Integrated Circuit Solution Inc]
Part No.	IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI IC62LV1024ALL-45H IC62LV1024ALL-45HI IC62LV1024ALL-45Q IC62LV1024ALL-45QI IC62LV1024ALL-45T IC62LV1024ALL-45TI IC62LV1024ALL-70TI IC62LV1024AL-45B IC62LV1024AL-45BI IC62LV1024AL-45H IC62LV1024AL-45HI IC62LV1024AL-45Q IC62LV1024AL-45QI IC62LV1024AL-45T IC62LV1024AL-45TI IC62LV1024AL-55B IC62LV1024AL-55BI IC62LV1024AL-55H IC62LV1024AL-55HI IC62LV1024AL-55Q IC62LV1024AL-55QI IC62LV1024AL-55T IC62LV1024AL-55TI IC62LV1024AL-70B IC62LV1024AL-70BI IC62LV1024AL-70H IC62LV1024AL-70HI IC62LV1024AL-70Q IC62LV1024AL-70QI IC62LV1024AL-70T IC62LV1024AL-70TI IC62LV1024ALL IC62LV1024ALL-55B IC62LV1024ALL-55BI IC62LV1024ALL-55H IC62LV1024ALL-55HI IC62LV1024ALL-55Q IC62LV1024ALL-55QI IC62LV1024ALL-55T IC62LV1024ALL-55TI IC62LV1024ALL-70B IC62LV1024ALL-70BI IC62LV1024ALL-70H IC62LV1024ALL-70HI IC62LV1024ALL-70Q IC62LV1024ALL-70QI IC62LV1024ALL-70T IC62LV1024AL-LL IC62LV1024LL-55Q IC62LV1024LL-70QI
Description	70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128K x 8 Ultra Low Power and Low VCC SRAM From old datasheet system 55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
File Size	118.06K / 11 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. 3M Company
Part No.	FAN2502S26 FAN2503S25
Description	THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节 Pch Power MOSFET; Surface Mount Type: N; Package: VS-8; R DS On (Î©): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -6) 积极的固定电压稳压器
File Size	379.30K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC Maxim Integrated Produc...
Part No.	MAX6456UT MAX6453UT MAX645310 MAX6454UT MAX6455UT MAX6453UT23ST MAX6456UT29ST MAX6455UT29ST MAX6454UT16ST MAX6456UT16S MAX6456UT23S MAX6456UT16S-T MAX6456UT26S MAX6456UT46S X6456UT46ST MAX6455UT16S
Description	uP Supervisors with Separate VCC Reset and Manual Reset Outputs µP Supervisors with Separate VCC Reset and Manual Reset Outputs 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6
File Size	147.55K / 11 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor
Part No.	MAX6754UKLD0-T MAX6755UKLD0-T MAX6756UKLD0-T MAX6757UTLD0-T MAX6758UTLD0-T MAX6759UTLD0-T MAX6754UKRD0-T MAX6755UKRD0-T MAX6756UKRD0-T MAX6757UTRD0-T MAX6758UTRD0-T MAX6759UTRD0-T MAX6754UKLD3-T MAX6755UKLD3-T MAX6756UKLD3-T MAX6757UTLD3-T MAX6758UTLD3-T MAX6759UTLD3-T MAX6760TAZWD3-T MAX6761TAZWD3-T MAX6762TAZWD3-T MAX6760TATWD3-T MAX6762TATWD3-T MAX6761TATWD3-T MAX6754UKTD0-T MAX6754UKTD3-T MAX6755UKTD0-T MAX6755UKTD3-T MAX6756UKTD0-T MAX6756UKTD3-T MAX6757UTTD0-T MAX6758UTTD0-T MAX6759UTTD0-T MAX6756UKWD0-T MAX6757UTWD0-T MAX6759UTWD0-T MAX6756UKRD3-T MAX6755UKRD3-T MAX6754UKRD3-T MAX6754UKWD3-T MAX6755UKWD3-T MAX6756UKWD3-T MAX6760TAWAD3-T MAX6761TAWAD3-T MAX6762TAWAD3-T
Description	Vcc: 5.0 V, active timeout period: 0.02 ms, low-power single/dual-voltage window detector Vcc: 3.0 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector Vcc: 5.0 V, active timeout period: 100 ms-320 ms, low-power, single/dual-voltage window detector Vcc: 5.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector Vcc: 2.5 V, Vcc:1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector Vcc: 3.3 V, Vcc: 1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector Vcc: 3.3 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector Vcc: 3.3 V, active timeout period:185 ms, low-power single/dual-voltage window detector Vcc: 1.8 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector Vcc: 3.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector Vcc: 1.8 V, Vcc:adj, active timeout period:185 ms, low-power single/dual-voltage window detector
File Size	305.48K / 22 Page	View it Online	Download Datasheet

				NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
Description	Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
File Size	29.07K / 5 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation. Renesas Electronics, Corp.
Part No.	M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M38232G4-XXXFP M38232G4-XXXHP M38233G4-XXXFP M38233G4-XXXHP M38234G4-XXXFP M38234G4-XXXHP M38235G4-XXXFP M38230G6-XXXFP M38230G6-XXXHP M38231G6-XXXFP M38231G6-XXXHP M38232G6-XXXFP M38232G6-XXXHP M38233G6-XXXFP M38233G6-XXXHP M38234G6-XXXFP M38234G6-XXXHP M38235G6-XXXFP M38235G6-XXXHP M38236G6-XXXHP M38237G6-XXXFP M38237G6-XXXHP M38238G6-XXXFP M38230G7-XXXFP M38230G7-XXXHP M38231G7-XXXFP M38231G7-XXXHP M38232G7-XXXFP M38232G7-XXXHP M38233G7-XXXFP M38233G7-XXXHP M38234G7-XXXFP M38234G7-XXXHP M38235G7-XXXFP M38235G7-XXXHP M38236G7-XXXFP M38236G7-XXXHP M38237G7-XXXFP M38237G7-XXXHP M38238G7-XXXFP M38238G7-XXXHP M38239G7-XXXFP M38239G7-XXXHP M38230G8-XXXFP M38230G8-XXXHP M38231G8-XXXFP M38231G8-XXXHP M38232G8-XXXFP M38232G8-XXXHP M38233G8-XXXFP M38233G8-XXXHP M38234G8-XXXFP M38234G8-XXXHP M38235G8-XXXFP M38235G8-XXXHP M38236G8-XXXFP M38236G8-XXXHP M38237G8-XXXFP M38237G8-XXXHP M38238G8-XXXFP M38238G8-XXXHP M38230GA-XXXFP M38230GA-XXXHP M38231GA-XXXFP M38231GA-XXXHP M38232GA-XXXFP M38232GA-XXXHP M38233GA-XXXFP M38233GA-XXXHP M38234GA-XXXFP M38234GA-XXXHP M38235GA-XXXFP M38235GA-XXXHP M38236GA-XXXFP M38236GA-XXXHP M38237GA-XXXFP M38237GA-XXXHP
Description	18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
File Size	901.80K / 76 Page	View it Online	Download Datasheet

				MITEQ, Inc. MITEQ INC
Part No.	MPAT-584643-10151MS MPAT-584643-10153FS MPAT-584643-10153MS MPAT-584643-50154FS MPAT-584643-60154FS MPAT-584643-20151FS MPAT-584643-40152MS MPAT-584643-50153MS MPAT-750850-125964-10103MS MPAT-584643-10151FS MPAT-584643-30153FS MPAT-750850-125964-10102MS MPAT-750850-125964-1052FS MPAT-750850-125964-10102FS MPAT-095145-10203FS MPAT-095145-50203FS MPAT-140145-3003FS MPAT-109122-60101MS MPAT-109122-60104MS MPAT-109122-60104FS MPAT-138145-4003FS MPAT-109122-6001FS MPAT-109122-60103MS MPAT-095145-20153FS MPAT-095145-4053FS MPAT-095145-1053FS MPAT-109122-60105MS MPAT-109122-60103FS MPAT-138145-50103FS MPAT-109122-6002MS MPAT-109122-6001MS MPAT-109122-60101FS MPAT-109122-60105FS MPAT-140145-30153FS MPAT-117122-1002MS MPAT-03800410-6003MS MPAT-03800410-3055FS MPAT-03800410-1003FS MPAT-03800410-1003MS MPAT-03800410-3003MS MPAT-03800410-2052FS MPAT-03800410-2053FS MPAT-173178-1005MS MPAT-03800410-2055FS MPAT-03800410-3053MS MPAT-124068-3701FS MPAT-124068-3764FS MPAT-173178-10105MS MPAT-173178-1051FS MPAT-173178-1053FS MPAT-173178-2051MS MPAT-03800410-3003FS MPAT-177202-10202FS MPAT-03800410-2052MS MPAT-584643-1002MS MPAT-117122-1002FS MPAT-03800410-1051MS MPAT-173181-1003FS MPAT-173181-1004MS
Description	5845 MHz - 6430 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7500 MHz - 8500 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.8 dB INSERTION LOSS-MAX 950 MHz - 1450 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX 14000 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX 10.95 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 13750 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX 11700 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 3800 MHz - 4100 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.3 dB INSERTION LOSS-MAX 17300 MHz - 17800 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.7 dB INSERTION LOSS-MAX 2000 MHz - 2200 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.7 dB INSERTION LOSS-MAX 17700 MHz - 20200 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX 17300 MHz - 18100 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX 12750 MHz - 13250 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX 1275 MHz - 1480 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX 4000 MHz - 8000 MHz RF/MICROWAVE FIXED ATTENUATOR, 2 dB INSERTION LOSS-MAX 3100 MHz - 3500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 8000 MHz - 12000 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 18800 MHz - 19600 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX 1500 MHz - 1800 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX 950 MHz - 1750 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX 10700 MHz - 12500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 6400 MHz - 7200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 10700 MHz - 11700 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7900 MHz - 8400 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
File Size	790.71K / 2 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
Part No.	CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA-BA25XC CY14B104NA-BA20XC
Description	4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
File Size	613.78K / 23 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FAN2500_FAN2501 FAN2501S25 FAN2501S28 FAN2500X25 FAN2500X26 FAN2500X27 FAN2501X30 FAN2501X33 FAN2501X25 FAN2501X26 FAN2501X27 FAN2501X28 FAN2501X285 FAN2500X28 FAN2500X285
Description	Pch Power MOSFET; ; Package: TPS; R DS On (Î©): (max 0.2) (max 0.12); I_S (A): (max -5) Pch Power MOSFET; Surface Mount Type: N; Package: PW-MINI; R DS On (Î©): (max 0.76) (max 0.45); I_S (A): (max -2) From old datasheet system 100 mA CMOS LDO Regulators
File Size	539.88K / 10 Page	View it Online	Download Datasheet

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