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Part No. |
MA4ST240-1141 MA4ST240-1146
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OCR Text |
...and low voltage operation. each varactor type has a q greater than 400 at -2 v. these diodes are offered with standard sn/pb plating , as well as 100% matte sn plating on our rohs compliant equivalent devices. applications the ma4s... |
Description |
S BAND, 3.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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File Size |
118.66K /
5 Page |
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Part No. |
ML4963-138 ML4971-138 ML4941-111 ML4941-118 ML4941-138 ML4943-111
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OCR Text |
..., 36, 103 silicon abrupt tuning varactor diodes 1. available in pill packages only. 2. chart iii(a) category 2 (power burn-in only).
m/a-com, inc. north america: tel. (800) 366-2266 n asia/paci?: tel. +81 (03) 3226-1671 n europe: tel. +44... |
Description |
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE 50 GHz - 60 GHz, GALLIUM ARSENIDE, GUNN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
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File Size |
59.55K /
6 Page |
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SKYWORKS SOLUTIONS INC
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Part No. |
SMV1234-003
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OCR Text |
...f silicon hyperabrupt junction varactor diodes is designed for use in vcos with low tuning voltage operation. the low resistance of these varactors makes them appropriate for high q resonators in wireless system vcos to frequencies beyond... |
Description |
S BAND, 9.63 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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File Size |
146.19K /
7 Page |
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TEMEX COMPONENTS
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Part No. |
DH71100-70T10
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OCR Text |
varactor plastic package surface mount silicon abrupt tuning varactor description this series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. this technology is used to produce abrupt tuning va... |
Description |
HF-S BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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File Size |
19.59K /
2 Page |
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TEMEX COMPONENTS
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Part No. |
TEMEXCOMPONENTS-DH76022-54T3 DH76100-70T10 DH76022-70T3 DH76033-51
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OCR Text |
varactor plastic package, surface mount hyperabrupt tuning varactor plastic package, surface mount hyperabrupt tuning varactor description this series of silicon tuning varactors consists of hyperabrupt epitaxial devices. they incorporate ... |
Description |
HF-S BAND, 23 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE HF-S BAND, 5.2 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE HF-S BAND, 8 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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File Size |
25.69K /
3 Page |
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it Online |
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Price and Availability
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