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  transistor igbt Datasheet PDF File

For transistor igbt Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    FAIRCHILD[Fairchild Semiconductor]
Part No. FGA25N120 FGA25N120AN FGA25N120ANTU
Description Discrete, NPT igbt
transistor,igbt,N-CHAN,1.2KV V(BR)CES,25A

File Size 457.90K  /  7 Page

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Part No. IRGC49B120UB
Description 1200 V, N-CHANNEL igbt
transistor | igbt | N-CHAN | 1.2KV V(BR)CES | CHIP

File Size 15.03K  /  1 Page

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    CY25AAJ-8 CY25AAJ-8F

Mitsubishi Electric Corporation
POWEREX [Powerex Power Semiconductors]
POWEREX[Powerex Power Semiconductors]
Part No. CY25AAJ-8 CY25AAJ-8F
Description Integrated Gate Bipolar transistor (igbt) Modules: 250V
Nch igbt for STROBE FLASHER

File Size 20.93K  /  2 Page

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    IRG4PC50UPBF

International Rectifier
Part No. IRG4PC50UPBF
Description 55 A, 600 V, N-CHANNEL igbt, TO-247AC
INSULATED GATE BIPOLAR transistor UltraFast Speed igbt

File Size 631.85K  /  9 Page

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    IRF[International Rectifier]
Part No. IRG4PSH71U IRG4PSH71UPBF
Description 99 A, 1200 V, N-CHANNEL igbt
INSULATED GATE BIPOLAR transistor
1200V UltraFast 8-40 kHz Discrete igbt in a TO-274AA package

File Size 268.45K  /  8 Page

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    CY20AAJ-8F

Powerex, Inc.
Powerex Power Semiconductors
Cypress Semiconductor
Mitsubishi Electric Corporation
Part No. CY20AAJ-8F
Description GTS03024-2s-025 N沟道igbt的的频闪闪光
Nch igbt for STROBE FLASHER
Integrated Gate Bipolar transistor (igbt) Modules: 250V

File Size 20.87K  /  2 Page

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    IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20MD-STRL

IRF[International Rectifier]
Part No. IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20MD-STRL
Description 600V Fast 1-8 kHz Copack igbt in a D2-Pak package
INSULATED GATE BIPOLAR transistor WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
transistor | igbt | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB

File Size 199.42K  /  11 Page

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    IRG4CC81KB IRG4CC40RB

International Rectifier
Part No. IRG4CC81KB IRG4CC40RB
Description transistor | igbt | N-CHAN | 600V V(BR)CES | CHIP 晶体管| igbt的|正陈| 600V的五(巴西)国际消费电子展|芯片
IRG4CC81KB igbt Die in Wafer Form

File Size 41.01K  /  1 Page

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    IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR
Description transistor | igbt | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| igbt的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB
INSULATED GATE BIPOLAR transistor Standard Speed igbt(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管igbt的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条)
INSULATED GATE BIPOLAR transistor Standard Speed igbt(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete igbt in a D2-Pak package

File Size 150.68K  /  9 Page

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    Continental Device India, Ltd.
Part No. ITE08C06 ITE08F06
Description transistor | igbt | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
transistor | igbt | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| igbt的|正陈| 600V的五(巴西)国际消费电子展| 8A条一(c)| TO - 220AB现有

File Size 261.89K  /  9 Page

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For transistor igbt Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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