...L
D RIV E R
80
RG
20V tp
D .U .T
IA S
+ V - DD
60
A
0.0 1
40
Fig 12a. Unclamped Inductive Test Circuit
20
0
V D D = 25 V
25 50 75 100 125
A
150
V (B R )D SS tp
S tarting T J , J unc tion T...
Description
55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的,1.9AN沟道HEXFET功率MOSFET5V的,1.9A沟道的HEXFET功率马鞍山场效应管) Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
...e Dimensions
unit : mm
3103-tp-5H
[L88MS33T]
Functions
. Output voltage: 3.3 V . On/off control of output voltage by strobe pin (active low) . 500 mA output current
Features
. Low minimum input-output voltage differential (0....
Description
3.3 V, 0.5 A Low Dropout Voltage Regulator with On/Off Function
...ckage Information Pkg. N P C TN tp Definition 44 ld. PLCC 40 ld. Plastic DIP 40 ld. Ceramic DIP 44 ld. PLCC 40 ld. Plastic DIP Temperature 0C to +70C 0C to +70C 0C to +70C -40C to +85C -40C to +85C CPU-only CPU-only ROM ROM ROM ROM OtpROM/E...
Description
From old datasheet system IC,MICROCONTROLLER,8-BIT,80251 CPU,CMOS,DIP,40PIN,PLASTIC HIGH-PERFORMANCE CHMOS MICROCONTROLLER
... IS TE RS DA C
AN A LO G O U tp U T R EG IST E R AN D 8 -B IT DA C
AG N D
DG N D
V REF (1.8 2V O R 2.5V)
REV. PrP 9/01
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibili...
From old datasheet system NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)