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Icemos Technology
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| Part No. |
ICE5N65D
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
Enhancement Mode MOSFET
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| File Size |
660.51K /
9 Page |
 View
it Online |
Download Datasheet
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Icemos Technology
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| Part No. |
ICE22N65W
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
538.97K /
8 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE22N60
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
553.14K /
9 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE22N60W
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
554.49K /
8 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE20N65
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
556.96K /
9 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE20N170
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
550.94K /
9 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE20N170B
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
480.43K /
9 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE8N73
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
Enhancement Mode MOSFET
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| File Size |
657.74K /
8 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE8N70FP
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
705.36K /
9 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE30N160
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| OCR Text |
... fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, ... |
| Description |
Enhancement Mode MOSFET
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| File Size |
556.49K /
9 Page |
View
it Online |
Download Datasheet |
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