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SSDI
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| Part No. |
SDR7RF SDR7PF SDR7TF
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| OCR Text |
... recovery time f =fast recovery (200 ns max) voltage/family p = 1300v r = 1400v t = 1500v sdr7pf thru sdr7tf series 7.0 amp fast recov... |
| Description |
(SDR7PF - SDR7TF) FAST recovery RECTIFIER
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| File Size |
156.55K /
2 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
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| Part No. |
IRF054
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| OCR Text |
... avalanche energy cd peak diode recovery dv/dt <d operating junction storage temperature range lead temperature weight 45* 3 1 220 150 1.2 20 480 - - 4,5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) ll.s(typical) units a w w/c v mj ... |
| Description |
60V, N-CHANNEL
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| File Size |
93.80K /
2 Page |
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it Online |
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AUK
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| Part No. |
SMK1060PS
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| OCR Text |
...0v, i s =10a - - 1.4 v reverse recovery time t rr - 470 - ns reverse recovery charge q rr i s =10a, v gs =0, di s /dt=100a/ us - 6 - uc note ; repetitive rating : pulse width limited by maximum junction temperatu... |
| Description |
Advanced N-Ch Power MOSFET
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| File Size |
1,694.38K /
34 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP130NH02L
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| OCR Text |
...0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 90 a di/dt = 100a/s v dd = 15 v t j = 150c (see test circuit, figure 5) 47 58 2.5 ns nc a electrical characteristics (continued) figur... |
| Description |
N-channel Power MOSFET
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| File Size |
343.23K /
13 Page |
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it Online |
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ST Microelectronics
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| Part No. |
MTP3055E
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| OCR Text |
...2a,v gs =0 2v t rr q rr reverse recovery time reverse recovery charge i sd = 12 a, di/dt = 100 a/s, v dd =30v,t j = 150c 65 0.17 ns c safe operating area thermal impedance
mtp3055e 4/8 static drain-source on resistance transconductance ou... |
| Description |
N-CHANNEL 60V - 0.1 OHM - 12A TO-220 STRIPFET POWER MOSFET
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| File Size |
278.11K /
8 Page |
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it Online |
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TY Semicondutor
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| Part No. |
AO3421
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| OCR Text |
... rr 4.4 nc body diode reverse recovery charge i f =-2.6a, di/dt=100a/ m s turn-on rise time turn-off delaytime turn-off fall time turn-on delaytime dynamic parameters total gate charge v gs =-10v, v ds =-15v, i d =-2.6a gate source charge... |
| Description |
Single P -Channel MOSFET
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| File Size |
336.35K /
5 Page |
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it Online |
Download Datasheet |
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