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For mes Found Datasheets File :: 551 Search Time::1.907ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1954A
OCR Text	mes FET (Leadless Ceramic Package) DESCRIPTION The MGF1954A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB Gl...
Description	Microwave Power mes FET
File Size	157.33K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1951A_1 MGF1951A MGF1951A1
OCR Text	mes FET (Leadless Ceramic Package) DESCRIPTION The MGF1951A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB Gl...
Description	Microwave Power mes FET
File Size	142.27K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TCM8240MD
OCR Text	...4:0] 85 55 HS_ES_LIM[2:0] 86 56 mes[7:0] 87 57 mes[15:8] LS_ES_LIM[3:0] 88 58 89 59 MDG[7:0] 90 5A AG_MIN[7:0] 91 5B AG_MAX[7:0] 92 5C MAG[7:0] 93 5D ALC_AG_POLE 94 5E ASC_AG[7:0] 95 5F ACDET_SW AC5060HZ ACDET_DLY[1:0] 96 60 97 61 98 62 99 ...
Description	1.3 Mega pixel sensor chip
File Size	282.10K / 30 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	NES2427P-60
OCR Text	mes FET NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs mes FET DESCRIPTION The NES2427P-60 is a 60 W push-pull type GaAs mes FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is c...
Description	60 W S-BAND PUSH-PULL POWER GaAs mes FET
File Size	42.35K / 8 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	NES2427P-45
OCR Text	mes FET NES2427P-45 45 W S-BAND PUSH-PULL POWER GaAs mes FET DESCRIPTION The NES2427P-45 is a 45 W push-pull type GaAs mes FET designed for high power transmitter applications for WLL repeater and base station systems. It is capable...
Description	45 W S-BAND PUSH-PULL POWER GaAs mes FET
File Size	44.03K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF1451A
OCR Text	mes FET DESCRIPTION The MGF1451A is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers QUA...
Description	Low Noise mes FET
File Size	178.69K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem...
Part No.	MGF1953A
OCR Text	mes FET (Leadless Ceramic Package) DESCRIPTION The MGF1953A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB Gl...
Description	Microwave Power mes FET
File Size	140.59K / 5 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE650R279A NE650R279A-T1
OCR Text	mes FET NE650R279A 0.2 W L, S-BAND POWER GaAs mes FET DESCRIPTION The NE650R279A is a 0.2 W GaAs mes FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of ...
Description	0.2 W L, S-BAND POWER GaAs mes FET 0.2册，S波段功率GaAs场效应晶体管 0.2 W L / S-BAND POWER GaAs mes FET
File Size	76.24K / 8 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE650R479A NE650R479A-T1
OCR Text	mes FET NE650R479A 0.4 W L, S-BAND POWER GaAs mes FET DESCRIPTION The NE650R479A is a 0.4 W GaAs mes FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of ...
Description	0.4 W L, S-BAND POWER GaAs mes FET 0.4册，S波段功率GaAs场效应晶体管 0.4 W L / S-BAND POWER GaAs mes FET
File Size	77.71K / 8 Page	View it Online	Download Datasheet

For mes Found Datasheets File :: 551 Search Time::1.907ms
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