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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON3408
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| OCR Text |
... d d n-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 30 v v ds =24v, v gs =0v 1 t j =125c 5 i gss 100 na v gs(th) gate threshold voltage 0.7 1 1.5 v i d(o... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
376.35K /
4 Page |
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it Online |
Download Datasheet
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON5802B
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| OCR Text |
...cement general description mode field effect transistor www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 10 m a bv gso 12 v v gs(th) 0.6 1.1 1.5 v i d(on) 55 a 12 15.5 19 t j =125c 19 23.5 29 v gs =4.0v, ... |
| Description |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
711.19K /
5 Page |
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it Online |
Download Datasheet |
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Honeywell Accelerometers
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| Part No. |
SS460S SS360ST SS360NT
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| OCR Text |
...at are operated by the magnetic field from a permanent magnet or an electromagnet . they are designed to res pond to alternating north ...effect bipolar latching sensor ics which do use chopper stabilization. th ese products ... |
| Description |
High Sensitivity Bipolar Latching
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| File Size |
439.79K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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