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For device Found Datasheets File :: 300583 Search Time::1.797ms
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				TOSHIBA
Part No.	TPC8132
OCR Text	... does not exceed 150 . note 2: device mounted on a glass-epoxy board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = -24 v, t ch = 25 (initial), l = 0.5 mh, r g = 25 ? , i ar = -7 a fig. ...
Description	Power MOSFET (P-ch single)
File Size	262.14K / 9 Page	View it Online	Download Datasheet


Part No.	IRFP3415
OCR Text	... switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-247 package is preferred for...
Description	43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
File Size	504.57K / 9 Page	View it Online	Download Datasheet


Part No.	100X07N474MV4T
OCR Text	...uit. x2y? is a balanced circuit device with two equal halves, tightly matched in both phase and magnitude with respect to ground. several advantages are gained by two balanced capacitors sharing a single ceramic component body. ? except...
Description	1 FUNCTIONS, 10 V, DATA LINE FILTER
File Size	496.01K / 6 Page	View it Online	Download Datasheet

				Supertex, Inc
Part No.	TN5325K1-G
OCR Text	...this combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coef?cient inherent in mos devices. characteristic of all mos structures, t...
Description	N-Channel Enhancement-Mode Vertical DMOS FET
File Size	517.13K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6N48FU
OCR Text	... between gate and source , this device enters v(br)dsx mode. note that the drain-source breakdown voltage is lowered in this mode. switching time test circuit precaution v th can be expressed as voltage between gate and source ...
Description	Load Switching Applications
File Size	171.07K / 5 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NVD4815N
OCR Text	... maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af...
Description	30 V, 35 A, Single N?Channel, DPAK/IPAK
File Size	150.08K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NVD4804N NVD4804NT4G NTD4804NT4G
OCR Text	...um ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. case 369aa dpak (bent lead) style 2 marking diagrams & pin assignment...
Description	Power MOSFET 30 V, 117 A, Single N?Channel, DPAK/IPAK
File Size	85.64K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	CAT24C256WI-G CAT24C256HU4EGT3 CAT24C256HU4IGT3 CAT24C256LE-G CAT24C256LI CAT24C256LI-G
OCR Text	...rror correction code) makes the device suitable for high reliability applications.* features ? supports standard, fast and fast ? plus i 2 c protocol ? 1.8 v to 5.5 v supply voltage range ? 64 ? byte page write buffer ? hardware write prote...
Description	256 kb I2C CMOS Serial EEPROM
File Size	197.40K / 18 Page	View it Online	Download Datasheet

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