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  ciss Datasheet PDF File

For ciss Found Datasheets File :: 30713    Search Time::1.875ms    
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    FS7KM-16 FS7KM-16A

Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS7KM-16 FS7KM-16A
OCR Text ... VGS (th) rDS (ON) VDS (ON) yfs ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 800V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, V...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 47.52K  /  4 Page

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    FS7KM-18A FS7KM-18

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-18A FS7KM-18
OCR Text ... VGS (th) rDS (ON) VDS (ON) yfs ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 900V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, V...
Description HIGH-SPEED SWITCHING USE

File Size 41.74K  /  4 Page

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    FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A

POWEREX[Powerex Power Semiconductors]
Fairchild Semiconductor
Part No. FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A
OCR Text ... VGS (th) rDS (ON) VDS (ON) yfs ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 900V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, V...
Description Fairchild Power Switch(FPS)
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 46.69K  /  4 Page

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    FS7KM-5

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-5
OCR Text ... VGS (th) rDS (ON) VDS (ON) yfs ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VG...
Description HIGH-SPEED SWITCHING USE

File Size 44.05K  /  4 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ... Qgd td(on) tr td(off) tf LD LS ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leaka...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ... Qgd td(on) tr td(off) tf LD LS ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leaka...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ... Qgd td(on) tr td(off) tf LD LS ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leaka...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ... Qgd td(on) tr td(off) tf LD LS ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leaka...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    EC4407KF-TR

Sanyo Semicon Device
Part No. EC4407KF-TR
OCR Text ...v 335 475 m w input capacitance ciss v ds =10v, f=1mhz 100 pf output capacitance coss v ds =10v, f=1mhz 22 pf reverse transfer capacitance crss v ds =10v, f=1mhz 15 pf turn-on delay time t d (on) see specified test circuit. 5.5 ns rise time...
Description General-Purpose Switching Device Applications

File Size 34.33K  /  4 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... Qgd td(on) tr td(off) tf LD LS ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage C...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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