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  8600 Datasheet PDF File

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    NXP Semiconductors N.V.
Part No. BYC10D-600 BYC10D-600-15
OCR Text ...ive peak forward current t p = 8.3 ms; sine-wave pulse; t j(init) =25c; see figure 3 -71a t p = 10 ms; sine-wave pulse; t j(init) =25c; ...600 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all ...
Description Hyperfast power diode 600 V, SILICON, RECTIFIER DIODE, TO-220AC

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    600-102-10 600-102-12 600-102-14 600-102-16 600-079-10 600-079-12 600-079-14 600-079-16 600-006-10 600-006-12 600-006-14

Glenair, Inc.
Part No. 600-102-10 600-102-12 600-102-14 600-102-16 600-079-10 600-079-12 600-079-14 600-079-16 600-006-10 600-006-12 600-006-14 600-006-16 600-079-08 600-006-08 600-102-08
OCR Text ... 10 10/11 6.50 (165.1) .858 (21.8) 12 12/13 6.50 (165.1) .984 (25.0) 14 14/15 6.50 (165.1) 1.112 (28.2) 16 16/17 7.00 (177.8) 1.198 (30.4) 1...600-079 and 600-103 (Anti-Decoupling) A B Dash Shell Ref. Ref. No. Size Ref. 7.38 (187.5) .659 (16.7...
Description Circular Backshell Assembly Wrenches and Repacement Insert Pads

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    1SR154-600 1SR154-400

EIC discrete Semiconductors
Part No. 1SR154-600 1SR154-400
OCR Text ...rent Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 Am...600 600 600 750 UNIT V V V A A V A C C Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND C...
Description SURFACE MOUNT RECTIFIERS

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    VISHAY SEMICONDUCTORS
Part No. BY500-600-E3 BY500-200/91-E3
OCR Text ...tified c u rrent (a) 0 20 40 60 8 0 100 120 140 0 1.0 2.0 3.0 4.0 5.0 6.0 0. 8 x0. 8 x 0.04" (20 x 20 x 1m m) copper heatsinks 0.375" (9.5m m) lead length t a =am b ient temperat u re t l = lead temperat u re resisti v eor ind u cti v e loa...
Description 5 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD
5 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

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    BYM10-600-E3/75 BYM10-600-E3/1 BYM10-100-E3

VISHAY SEMICONDUCTORS
Vishay Siliconix
Part No. BYM10-600-E3/75 BYM10-600-E3/1 BYM10-100-E3
OCR Text ...0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a www.vishay.com 2 document number 88...600 bym 10-800 bym 10-1000 unit standard recovery device: 1st band is white gl41a gl41b gl41d gl41...
Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB
Surface Mount Glass Passivated Junction Rectifier

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    BYC58X-600

NXP Semiconductors N.V.
Part No. BYC58X-600
OCR Text 8 A hyperfast rectifier diode Rev. 01 -- 23 February 2010 Product data sheet 1. Product profile 1.1 General description Hyperfast epit...600 8 110 120 3 Unit V A A A K/W repetitive peak reverse voltage average forward current non-repetit...
Description Casco diode 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
8 A hyperfast rectifier diode

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    BYV410X-600

NXP Semiconductors
Part No. BYV410X-600
OCR Text ... 25 s; Th 60 C; per diode tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 C; per diode tp = 10 ms; sine-wave pulse; Tj(init) 25 C; per diode Conditions Min -40 Max 600 600 600 20 20 132 120 150 150 Unit V V V A A A A C C In accordance with ...
Description Enhanced ultrafast dual rectifier diode

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    BYV410-600

NXP Semiconductors
Part No. BYV410-600
OCR Text ...5 s; Tmb 108 C; per diode tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 C; per diode tp = 10 ms; sine-wave pulse; Tj(init) = 25 C; per diode Conditions Min -40 Max 600 600 600 20 20 132 120 150 150 Unit V V V A A A A C C In accordance wit...
Description Enhanced ultrafast dual rectifier diode

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    STK672-600

Sanyo Semicon Device
Part No. STK672-600
OCR Text ... large heat sink. per mosfet 7.8 w allowable power dissipation 2 pdpk max no heat sink 3.1 w operating substrate temperature tc max ...600 no. a0755-3/19 package dimensions unit:mm (typ) ...
Description Thick-Film Hybrid IC 2-phase Stepping Motor Driver

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