.................................1.6w Operating Temperature Range ...........................-40C to +85C All Other Pins to GND.................................-0.3V to (VCC + 0.3V) LX Current (Note 1).............................................
Description
2.7A, 1MHz, Low-Voltage, Step-Down Regulator with Internal Synchronous Rectification in QFN Package 2.7A / 1MHz / Low-Voltage / Step-Down Regulator with Internal Synchronous Rectification in QFN Package
...TS) Pout = 100 W VCC = 28 V 100 6w 80 Pin = 10 W 8W
60
40 f = 100 MHz 28
f, FREQUENCY (MHz)
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 6. Power Gain versus Frequency
Figure 7. Power Output versus Supply Voltage
120 Pout, POWER ...
... power consumption is 0.4W to 0.6w. * Display surface luminance is typ 200cd/m2.
Specifications
Item Dot count (H) x (V) Effective display dimensions (H) x (V) Display size (diagonal) Dot pitch (H) x (V) Color arrangement External Dimen...
Description
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:12-35 RoHS Compliant: No Low-Temperature Polysilicon 1.5-inch TFT LCD Module
...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25C
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pu...
Description
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
...V NF A I
VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode)
2
ns
MAX
UNIT Amps Volts ns C
46 184 1.3
(VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery ...
Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
...DSS ID = ID[Cont.] @ 25C RG = 0.6w MIN TYP MAX UNIT
5375 1040 185 145 34 76 12 15 28 4.6
6500 1460 280 220 41 120 24 30 42 10.0
ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay T...
Description
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm