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  38ghz Datasheet PDF File

For 38ghz Found Datasheets File :: 971    Search Time::1.5ms    
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    START499 START499TR

STMICROELECTRONICS[STMicroelectronics]
Part No. START499 START499TR
OCR Text ...dering point 150 oC/W July, 3 2002 1/7 START499 ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified) Symbol Icbo Ieb...8GHz Ic = 200mA,Vce = 3V, f = 1.8GHz Ic = 200mA,Vce = 3V, f = 1.8GHz Ic = 200mA,Vce = 3V, f = 1.8GHz...
Description NPN Silicon RF Transistor

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    BFR193W Q62702-F1510

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SIEMENS[Siemens Semiconductor Group]
Part No. BFR193W Q62702-F1510
OCR Text ...R 193W RCs Q62702-F1510 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...8GHz VCE = Parameter 10 dB 3V 10V 10V G 15 14 G 8 7 2V 3V 13 12 11 10 9 8 7 6 5 0 10...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)

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    BFR193 Q62702-F1218

SIEMENS[Siemens Semiconductor Group]
Part No. BFR193 Q62702-F1218
OCR Text ...FR 193 RCs Q62702-F1218 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Colle...8GHz VCE = Parameter 10 dB G dB 8V 3V 8V G 8 3V 12 7 2V 6 2V 10 5...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

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    EFE960BVR-5759

Excelics Semiconductor, Inc.
Part No. EFE960BVR-5759
OCR Text ...off Voltage Thermal Resistance 3 1400 mA dBc -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA mA V o C/W 1. FET TO BE TESTED IN EXCELICS EVALUATION BOARD. 2. S.C.L. = Single Carrier L...
Description 5.70-5.90GHz 4-Watt Partially Matched Power FET

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    LT5500EGN

Linear Technology
Part No. LT5500EGN
OCR Text ...3 LO INPUT 13.6 13.5 13.4 13.3 INTERSTAGE FILTER MIX_IN L9 C23 13.2 13.1 13.0 1.5 2 2.5 3 3.5 VCC (V) 4 4.5 5 5.5 IF OUTPU...8GHz application) VCC = 3V DC, LNA: fLNA_IN = 1.8GHz, Mixer: fMIX_IN = 1.8GHz, fLO = 1.52GHz, PLO = ...
Description 1.8GHz to 2.7GHz Receiver Front End

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    TOKO INC
Part No. CHM2012U-F4R0BD
OCR Text ...ons. with a frequency range of 3.2 to 4.8ghz, it can be used for both ds and m b ofdm a pp lications. features com p act and low p rofile: 2.0 x 1.25 x 1.0mm max. low insertion loss. a pp lication of dc bias can be done. rohs com p li...
Description 3200 MHz - 4800 MHz RF TRANSFORMER

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    SBFP420B

Sanyo Semicon Device
Part No. SBFP420B
OCR Text ....25 [SBFP420B] Side View 3 0.05 4 0.65 0.4 0.25 0.05 2 1 0.05 0.5 Top View 0.6 0.15 0.15 Side View ...8GHz VCE=2V, IC=20mA, f=1.8GHz VCE=2V, IC=5mA, f=1.8GHz Ratings min 14 typ 16 17 1.1 1.5 max U...
Description Ultrahigh-Frequency Transistors
UHF to C Band Low Noise Amplifier, Oscillation Applications
From old datasheet system

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    BFG193 Q62702-F1291

SIEMENS[Siemens Semiconductor Group]
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Part No. BFG193 Q62702-F1291
OCR Text ...193 BFG193 Q62702-F1291 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...8GHz VCE = Parameter 12 10V dB 5V 3V 8 dB G 16 10V 5V 3V G 14 2V 12 2V 6 10 4...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

File Size 48.58K  /  6 Page

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