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320v Datasheet PDF File

For 320v Found Datasheets File :: 703 Search Time::1.36ms
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				International Rectifier
Part No.	IRFU9310PBF IRFR9310PBF
OCR Text	...= -400V, VGS = 0V A -500 VDS = -320v, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V 13 ID = -1.1A 3.2 nC VDS = -320v 5.0 VGS = -10V, See Fig. 6 and 13 VDD = -200V ID = -1.1A ns RG = 21 RD = 180, See Fig. 10 D Between lead, 4.5 ...
Description	HEXFET POWER MOSFET
File Size	250.03K / 10 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STTH60R04 STTH60R04W
OCR Text	...0 7.5 5.0 IRM(A) IF= 60A VR=320v Tj=125 C tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 2.5 0.0 10 Tj=25 C dIF/dt(A/s) 100 1000 Figure 5. tRR(ns) Reverse recovery time versus dIF/dt (typical values) IF= 60A VR=320v...
Description	Ultrafast recovery diode
File Size	87.03K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP01N40J
OCR Text	...ge current (t j =150 o c) v ds =320v , v gs =0v - - 100 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 3 i d =1a - 2.9 4.6 nc q gs gate-source charge v ds =320v - 0.6 - nc q gd gate-drain ("miller") charge v gs =1...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	62.41K / 4 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STTH200R04TV STTH200R04TV1
OCR Text	...20 15 10 IRM(A) IF= 100A VR=320v Tj=125 C Tj=25 C tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 5 0 10 100 dIF/dt(A/s) 1000 3/7 Characteristics STTH200R04TV Figure 5. tRR(ns) Reverse recovery time versus dI...
Description	Ultrafast recovery diode
File Size	92.24K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF740ASPBF IRF740LPBF
OCR Text	...DS = 400V, VGS = 0V A 250 VDS = 320v, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transcon...
Description	SMPS MOSFET
File Size	283.29K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFRU9310 IRFU9310 IRFR9310
OCR Text	...= -400V, VGS = 0V A -500 VDS = -320v, VGS = 0V, TJ = 125C 100 V GS = 20V nA -100 VGS = -20V 13 ID = -1.1A 3.2 nC VDS = -320v 5.0 VGS = -10V, See Fig. 6 and 13 --- VDD = -200V --- I D = -1.1A ns --- RG = 21 --- RD = 180, See Fig. 10 D Betw...
Description	-400V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 7.0ohm，身份证\u003d- 1.8A
File Size	110.22K / 10 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	D9N40
OCR Text	...al gate charge v gs =10v, v ds =320v, i d =8a gate source charge gate drain charge i s =1a,v gs =0v v ds =40v, i d =4a v ds =0v, v gs =30v v gs =10v, i d =4a i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c v ds =5v i d =250 ...
Description	AOD9N40
File Size	341.07K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDP26N40 FDPF26N40
OCR Text	...25oC VDS = 400V, VGS = 0V VDS = 320v, TC = 125oC VGS = 30V, VDS = 0V 400 0.5 1 10 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID ...
Description	N-Channel MOSFET 400V, 26A, 0.16Ω N-Channel MOSFET 400V, 26A, 0.16ヘ
File Size	545.46K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDA24N40F
OCR Text	... 250A, Referenced to 25oC VDS = 320v, TC = 125oC VGS = 30V, VDS = 0V VDS = 400V, VGS = 0V 400 0.5 10 100 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transcon...
Description	N-Channel MOSFET, FRFET 400V, 23A, 0.19Ω N-Channel MOSFET, FRFET 400V, 23A, 0.19ヘ
File Size	637.17K / 8 Page	View it Online	Download Datasheet

For 320v Found Datasheets File :: 703 Search Time::1.36ms
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