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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS30N120HB
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| Description |
SiC Schottky Barrier Diode (SBD), 1200 V, 30 A, 2 in 1, TO-247
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW030N120C
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| Description |
N-ch SiC MOSFET, 1200 V, 60 A, 0.04 Ω@18 V, TO-247
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| Tech specs |
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Official Product Page
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HARRIS SEMICONDUCTOR
http://
INTERSIL[Intersil Corporation]
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| Part No. |
HGTG30N120CN
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| Description |
75A, 1200V, NPT Series N-Channel IGBT(75A, 1200V, NPT 绯诲?N娌??缁?????????朵?绠?
75A/ 1200V/ NPT Series N-Channel IGBT
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| File Size |
80.28K /
7 Page |
 View
it Online |
Download Datasheet
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Bom2Buy.com
Price and Availability
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JITONG
TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor |
| Part: 30N06 |
| Maker: ST |
| Pack: SOT263 |
| Stock: 174 |
| Unit price
for : |
|
50: $0.49 |
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100: $0.47 |
| 1000:
$0.44 |
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