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For 20.0m Found Datasheets File :: 6064 Search Time::4.625ms
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				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SB1072 2SB1072L 2SB1072S
OCR Text	...1 Rating -100 -80 -7 -4 4 -8 20 150 -55 to +150 Unit V V V A A A W C C I C(peak) PC * Tj Tstg 1 Electrical Characteristics (Ta ...0m (T C 10 -0.3 -0.1 -0.03 Ta = 25C 1 Shot Pulse s ) =2 C 5 0 50 100 Case tempe...
Description	Silicon PNP Triple Diffused 三重扩散硅进步党
File Size	34.72K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1079
OCR Text	...stg 1 Ratings -100 -100 -7 -20 -30 -3 100 150 -55 to +150 Unit V V V A A A W C C Electrical Characteristics (Ta = 25C) Item Colle...0m 40 0 50 100 Case temperature TC (C) 150 -10 -30 -100 -300 Collector to emitter vol...
Description	Silicon PNP Triple Diffused
File Size	35.32K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1091
OCR Text	...ector power dissipation Pc (W) -20 -10 Collector Current IC (A) -5 -2 Area of Safe Operation iC (peak) IC (max) 1 s 100 s 1m s PW =1 40 0m DC -1.0 -0.5 -0.2 Ta = 25C -0.1 1 Shot pulse -0.05 s er ati on Op 20 ...
Description	Silicon PNP Triple Diffused
File Size	34.50K / 6 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SB1181 2SB1260 2SB1241
OCR Text	...1.0 -1.2 -1.4 -1.6 -1.8 -2.0 20 10 -1 -2 -5 -10 -20 -50-100 -200-500-1000-2000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR ...0m =1 PW PW 200 100 50 s 0 =1 ms m 00 =1 PW 00 DC m s s -0.2 -0.1 -0...
Description	Power Transistor
File Size	78.57K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] http://
Part No.	2SB791 2SB791K
OCR Text	... 0m s =2 io n (TC 20 ) 5C Ta = 25C 1 Shot Pulse 0 50 100 Case temperature TC (C) 150 -0.03 -1 -3 -10 -30 -100 -300 -1,000 Collector to emitter voltage VCE (V) 2 2SB791(K) Typical Output Characterist...
Description	Silicon PNP Epitaxial
File Size	36.18K / 6 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SC5071
OCR Text	... V V MHz pF 4.0 a b o3.20.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Co...0m A 60 0m A 10 V B E( sat) 1 -55C (Case Temp) Collector Current I C (A) 8 400m A 8 ...
Description	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
File Size	23.88K / 1 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SD2439
OCR Text	...ural Cooling 0.1 40 40 20 20 Without Heatsink 5 10 50 100 200 3.5 0 0 50 100 150 0 -0.02 -0.1 -1 Emitter Current I E( A) -10 0.05 3 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 152 ...
Description	Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)
File Size	24.85K / 1 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302L IRF1302S
OCR Text	...s Max. 174 120 700 200 1.4 20 350 See Fig.12a, 12b, 15, 16 TBD -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB mount) Typ. -...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)
File Size	225.99K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302
OCR Text	...s Max. 180 130 700 230 1.5 20 350 See Fig.12a, 12b, 15, 16 TBD -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Ju...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)
File Size	516.95K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	... Max. 280 200 75 1080 330 2.2 20 670 1160 See Fig.12a,12b,15,16 -55 to + 175 Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalan...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

For 20.0m Found Datasheets File :: 6064 Search Time::4.625ms
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