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  1e5 Datasheet PDF File

For 1e5 Found Datasheets File :: 281    Search Time::1.375ms    
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    FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3 FSL130R4 FN4031

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3 FSL130R4 FN4031
OCR Text ...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 28 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20 ...
Description From old datasheet system
8A/ 100V/ 0.230 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A条,100V的,0.230欧姆,拉德硬,SEGR耐,N沟道功率MOSFET

File Size 45.31K  /  8 Page

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    FSL9110R1 FSL9110R FSL9110D FN4225 FSL9110R4 FSL9110D1 FSL9110D3 FSL9110R3

INTERSIL[Intersil Corporation]
Part No. FSL9110R1 FSL9110R FSL9110D FN4225 FSL9110R4 FSL9110D1 FSL9110D3 FSL9110R3
OCR Text ...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 1...
Description 2.5 A, 100 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

File Size 57.46K  /  8 Page

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    FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3

INTERSIL[Intersil Corporation]
Part No. FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3
OCR Text ...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20 ...
Description 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 59.37K  /  9 Page

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    FSJ9160R FSJ9160R1 FSJ9160R3 FSJ9160R4 FSJ9160D FN4465 FSJ9160 FSJ9160D1 FSJ9160D3

INTERSIL[Intersil Corporation]
Part No. FSJ9160R FSJ9160R1 FSJ9160R3 FSJ9160R4 FSJ9160D FN4465 FSJ9160 FSJ9160D1 FSJ9160D3
OCR Text ...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (Typ), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 10 15...
Description 44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system

File Size 45.96K  /  8 Page

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    FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FSYC160D1 FSYC160D3 FN4547

INTERSIL[Intersil Corporation]
Part No. FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FSYC160D1 FSYC160D3 FN4547
OCR Text ...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20 ...
Description From old datasheet system
Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

File Size 48.81K  /  8 Page

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    FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3
OCR Text ...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 1...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 60.40K  /  8 Page

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    JANSR2N7400 FN4373

INTERSIL[Intersil Corporation]
Part No. JANSR2N7400 FN4373
OCR Text ...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Typical Performance Curves 240 Unless Otherwise Specified LET = 26MeV/mg/cm2, RA...
Description From old datasheet system
8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET
8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET

File Size 42.96K  /  8 Page

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    JANSR2N7404 FN4491

INTERSIL[Intersil Corporation]
Part No. JANSR2N7404 FN4491
OCR Text ...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (...
Description From old datasheet system
15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET

File Size 44.35K  /  8 Page

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    JANSR2N7407 FN4636

INTERSIL[Intersil Corporation]
Part No. JANSR2N7407 FN4636
OCR Text ...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (...
Description Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 54.70K  /  8 Page

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    FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 FSS130R4 FN4059

INTERSIL[Intersil Corporation]
Part No. FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 FSS130R4 FN4059
OCR Text ...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20 ...
Description 11A/ 100V/ 0.210 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 44.41K  /  8 Page

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For 1e5 Found Datasheets File :: 281    Search Time::1.375ms    
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