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![FSL9110R1 FSL9110R FSL9110D FN4225 FSL9110R4 FSL9110D1 FSL9110D3 FSL9110R3](Maker_logo/intersil_corporation.GIF)
INTERSIL[Intersil Corporation]
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Part No. |
FSL9110R1 FSL9110R FSL9110D FN4225 FSL9110R4 FSL9110D1 FSL9110D3 FSL9110R3
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OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 1... |
Description |
2.5 A, 100 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF From old datasheet system 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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File Size |
57.46K /
8 Page |
View
it Online |
Download Datasheet
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![FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3](Maker_logo/intersil_corporation.GIF)
INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3
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OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 1... |
Description |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs From old datasheet system Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
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File Size |
60.40K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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