| |
|
 |
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
| Part No. |
ZXMP62M832TA ZXMP62M832
|
| OCR Text |
...esting.
V GS =-4.5V, I D =-0.61A V GS =-2.7V, I D =-0.31A V DS =-10V,I D =-0.31A
g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Q gs Q gd V SD t rr Q rr
150 70 30
pF pF pF V DS =-15V, V GS =0V, f=1MHz
2.9 6.7 11.2 10.2 5.2 ... |
| Description |
MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET 1300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
| File Size |
282.25K /
7 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Fairchild
|
| Part No. |
FDB3652FDP3652FDI3652
|
| OCR Text |
61A, 16m
Features
* r DS(ON) = 14m (Typ.), VGS = 10V, ID = 61A * Qg(tot) = 44nC (Typ.), VGS = 10V * Low Miller Charge * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101
Formerly developmenta... |
| Description |
N-Channel UltraFET® Trench MOSFET
|
| File Size |
202.86K /
11 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FDP61N20
|
| OCR Text |
61A, 200V, RDS(on) = 0.041 @VGS = 10 V * Low gate charge ( typical 58 nC) * Low Crss ( typical 80 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field ef... |
| Description |
200V N-Channel MOSFET
|
| File Size |
592.37K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRL3102PBF
|
| OCR Text |
...hroughout the industry.
ID = 61A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C V GS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4... |
| Description |
HEXFET Power MOSFET
|
| File Size |
128.67K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
NXP Semiconductors N.V.
|
| Part No. |
PSMN7R0-30YLC
|
| OCR Text |
...5c; v gs =10v; see figure 1 --61a p tot total power dissipation t mb = 25 c; see figure 2 --48w t j junction temperature -55 - 175 c static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =20a; t j =25c; see fi... |
| Description |
N-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technology
N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology
|
| File Size |
312.19K /
15 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
